| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Ampleon |
RF FET LDMOS 65V 16.2DB SOT1258 |
52 |
|
 |
NCH 4V DRIVE SERIES |
6000 |
|
|
 |
Ampleon |
RF FET LDMOS 135V 27DB SOT12242 |
103 |
|
 |
PCH 4V DRIVE SERIES |
13000 |
|
|
 |
Ampleon |
RF PFET, 1-ELEMENT, L BAND, SILI |
25 |
|
 |
NXP Semiconductors |
FET RF 70V 960MHZ OM780-2 |
0 |
|
 |
NXP Semiconductors |
FET RF 68V 1.96GHZ PLD-1.5 |
991 |
|
 |
STMicroelectronics |
FET RF 40V 870MHZ |
0 |
|
 |
Ampleon |
RF FET LDMOS 65V 15.4DB SOT12587 |
54 |
|
 |
Ampleon |
RF MOSFET LDMOS 50V SOT467C |
18 |
|
 |
Renesas Electronics America |
SMALL SIGNAL FET |
48000 |
|
 |
Ampleon |
RF FET LDMOS 65V 18DB 16VDFN |
315 |
|
 |
Ampleon |
RF FET LDMOS 65V 15.3DB SOT1258 |
196 |
|
 |
Freescale Semiconductor, Inc. (NXP Semiconductors) |
RF VERY HIGH FREQUENCY BAND, N-C |
0 |
|
 |
NCH+NCH 4V DRIVE SERIES |
25000 |
|
|
 |
Ampleon |
RF FET LDMOS 65V 19DB SOT502B |
141 |
|
 |
Ampleon |
RF FET HEMT 150V 14DB SOT1228B |
20 |
|
 |
Ampleon |
RF MOSFET LDMOS 50V SOT539B |
74 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH PW-MINI |
0 |
|
 |
NXP Semiconductors |
FET RF NCH 65V 2700MHZ PLD1.5W |
1163 |
|
RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.
| Type | Functional Features | Application Examples |
|---|---|---|
| Junction FET (JFET) | Voltage-controlled device with low noise and high input impedance | Low-noise amplifiers in RF receivers |
| MESFET | Metal-Semiconductor FET with GaAs substrate for high-speed operation | Satellite communication systems |
| HEMT/PHEMT | High-electron-mobility transistor with pseudomorphic structures | 5G base stations, microwave amplifiers |
| LDMOS | Lateral Diffused MOSFET with high power density and thermal stability | Cellular base station amplifiers |
| GaN HEMT | Gallium Nitride-based HEMT for ultra-high frequency/power | Radar systems, 5G mmWave |
RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.
| Parameter | Description | Importance |
|---|---|---|
| Frequency Range | Operational bandwidth (e.g., 0.1-6 GHz) | Determines application suitability |
| Power Output (P1dB) | 1dB compression point (e.g., 10-500W) | Measures linearity and saturation |
| Gain (S21) | Signal amplification ratio (e.g., 10-30 dB) | System sensitivity indicator |
| Efficiency (PAE) | Power-added efficiency (e.g., 40-75%) | Energy consumption metric |
| Input/Output VSWR | Voltage Standing Wave Ratio (e.g., <2:1) | Mismatch loss assessment |
| Manufacturer | Representative Product | Key Specifications |
|---|---|---|
| NXP Semiconductors | MRF1K50GN | 50W GaN HEMT, 1.8-2.7GHz, 70% PAE |
| Wolfspeed (Cree) | CGH4G090400F | 400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness |
| Infineon | BLS14H10LS-250 | 250W LDMOS, 1.8-2.2GHz, 14dB gain |
| MACOM | NPT1007 | SiGe HBT, 7GHz, 18dB gain for 5G |
Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management