Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
BLC8G20LS-400AVY Ampleon	RF FET LDMOS 65V 15.5DB SOT12583	181
MRF13750HR5 NXP Semiconductors	RF MOSFET LDMOS DL 50V NI-1230	77
AFM906NT1 NXP Semiconductors	RF MOSFET LDMOS 10.8V 16DFN	545
STAC2932F STMicroelectronics	TRANS RF PWR N-CH STAC244F	0
CG2H40025F Wolfspeed - a Cree company	RF MOSFET HEMT 28V 440166	1248
BLF13H9LS750PU Ampleon	BLF13H9LS750P/SOT539/TRAY	55
BLF7G24LS-100,118 Ampleon	RF FET LDMOS 65V 18DB SOT502B	0
MCH6655-TL-E	PCH+PCH 4V DRIVE SERIES	3000
MMRF1019NR4 NXP Semiconductors	FET RF 100V 1.09GHZ PLD-1.5	83
BLF882SU Ampleon	RF FET LDMOS 104V 20.6DB SOT502B	21
CGHV96130F Wolfspeed - a Cree company	100W GAN HEMT 7.9-9.6GHZ 50-OHM	0
BLF888A,112 Ampleon	RF FET LDMOS 110V 21DB SOT539A	64
MRF9060NR1 NXP Semiconductors	FET RF 65V 945MHZ TO270-2	0
BLF8G22LS-220U Ampleon	RF FET LDMOS 65V 17DB SOT502B	0
MMRF1306HR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	41
MMRF5014HR5 NXP Semiconductors	FET RF 125V 2.5GHZ NI360	147
BLC8G27LS-240AVU Ampleon	RF FET LDMOS 65V 14DB SOT12521	60
BLF574XRS,112 Ampleon	RF FET LDMOS 110V 23DB SOT1214B	0
MD7P19130HSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF 2-ELEMENT, S BAND, N-CHANNEL	6600
MRF6S19120HR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 68V 1.99GHZ NI-780	50

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management