Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
MMRF1013HR5 NXP Semiconductors	FET RF 2CH 65V 2.9GHZ	0
MRF6V2150NR1 NXP Semiconductors	RF MOSFET LDMOS 50V TO270	356
BLP9G0722-20GZ Ampleon	RF MOSFET LDMOS 28V SOT1483-1	6
PD85025-E STMicroelectronics	FET RF 40V 870MHZ	0
BLF2425M8L140J Ampleon	RF FET LDMOS 65V 19DB SOT502A	0
BLF8G24LS-150GVQ Ampleon	RF FET LDMOS 65V 19DB SOT1244C	96
CGH35030F Wolfspeed - a Cree company	30W GAN HEMT 28V 6.0GHZ FLANGE	66
MRF175LU Metelics (MACOM Technology Solutions)	FET RF 65V 400MHZ 333-04	140
CLF1G0035S-100,112 Ampleon	RF MOSFET HEMT 50V LDMOST	32
BLF8G22LS-270J Ampleon	RF FET LDMOS 65V 17.7DB SOT502B	76
MRF6S27085HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	POWER, N-CHANNEL, MOSFET	5
BLL6H0514L-130,112 Ampleon	RF FET LDMOS 100V 17DB SOT1135A	67
MRF300BN NXP Semiconductors	RF MOSFET LDMOS 50V TO247	108
BLP15H9S100GZ Ampleon	BLP15H9S100G/SOT1483/REELDP	0
BLM7G1822S-20PBGY Ampleon	RF FET LDMOS 65V 32.3DB SOT12121	162
MRFE6S9135HR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 66V 940MHZ NI-880	40
MRF6S27050HR5 NXP Semiconductors	FET RF 68V 2.62GHZ NI-780	0
BLF6G21-10G,135 Ampleon	RF FET LDMOS 65V 18.5DB SOT538A	0
CE3520K3-C1 CEL (California Eastern Laboratories)	RF FET 4V 20GHZ 4MICROX	8337
BLM7G1822S-40ABY Ampleon	RF FET LDMOS 65V 31.5DB SOT12112	100

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management