Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
BLF7G24L-100,112 Ampleon	RF FET LDMOS 65V 18DB SOT502A	0
MW6S010GNR1 NXP Semiconductors	RF MOSFET LDMOS 28V TO270-2 GULL	691
CLF1G0060-30U Ampleon	RF FET HEMT 150V 13DB SOT1227A	32
BF5030WH6327XTSA1 IR (Infineon Technologies)	BF5030	0
BLF574,112 Ampleon	RF FET LDMOS 110V 26.5DB SOT539A	0
BLF2425M9LS140J Ampleon	TRANS RF 140W LDMOST	0
LET9120 STMicroelectronics	MOSFET N-CH 80V 18A M-246	0
MRF5S19060MBR1 NXP Semiconductors	FET RF 65V 1.99GHZ TO-272-4	0
MRFE6VP61K25GNR6 NXP Semiconductors	TRANS RF LDMOS 1250W 50V	0
BLP10H610Z Ampleon	RF FET LDMOS 104V 22DB 12VDFN	0
NE3521M04-T2-A Renesas Electronics America	SMALL SIGNAL N-CHANNEL MOSFET	39000
MMBFJ309	RF SMALL SIGNAL FIELD-EFFECT TRA	3990
BLF2324M8LS200PU Ampleon	RF FET LDMOS 65V 17.2DB SOT539B	55
MRF8S21100HSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF S BAND, N-CHANNEL	905
MRF166C Metelics (MACOM Technology Solutions)	FET RF 65V 500MHZ 319-07	12420
BLS9G2735LS-50U Ampleon	RF MOSFET LDMOS SOT1135B	14
CGHV59070F Wolfspeed - a Cree company	RF MOSFET HEMT 50V 440224	118
CGH09120F Wolfspeed - a Cree company	RF MOSFET HEMT 28V 440095	173
BLF6G38LS-50,112 Ampleon	RF FET LDMOS 65V 14DB SOT502B	80
MRF6V13250HSR5 NXP Semiconductors	FET RF 120V 1.3GHZ NI780S	0

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management