Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
VEC2415-TL-W-Z Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 3A SOT28	0
EFC4C002NLTDG Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 8WLCSP	0
NVMFD020N06CT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 8DFN 5X6	6000
NTMFD030N06CT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V T6 8DFN	0
NVMFD5C462NWFT1G Sanyo Semiconductor/ON Semiconductor	40V 5.4 MOHM T8 S08FL DUA	42000
FDMS1D2N03DSD Sanyo Semiconductor/ON Semiconductor	PT11N 30/12 & PT11N 30/12	0
NTMFD024N06CT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V T6 8DFN	0
NTMFD5C466NT1G Sanyo Semiconductor/ON Semiconductor	40V 8.1 MOHM T8 S08FL DUA	78000
NTMFD6H846NLT1G Sanyo Semiconductor/ON Semiconductor	DUAL N-CHANNEL POWER MOSFET 80V,	15000
NTTFS5C658NLTAG Sanyo Semiconductor/ON Semiconductor	AFSM T6 60V LL U8FL	0
EFC4K110NUZTDG Sanyo Semiconductor/ON Semiconductor	NCH 24V 25A WLCSP DUAL	4855
VEC2616-TL-H-Z-W Sanyo Semiconductor/ON Semiconductor	PCH+NCH 4V DRIVE SERIES	0
NVMFWD030N06CT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH DUAL 60V SO8FL	13500
EFC2J022NUZTCG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 12V 2.2MOHM WLCSP10	0
NTTFD9D0N06HLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET, POWER, 60V POWERTRENCH P	0
EFC3J018NUZTDG Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 23A 6WLCSP	0
NTMFD5C462NLT1G Sanyo Semiconductor/ON Semiconductor	T6 40V LL S08FL DS	3000
FDMS0348 Sanyo Semiconductor/ON Semiconductor	MOSFET	0
NVMFWD016N06CT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH DUAL 60V SO8FL	9000
NTTFS5C478NLTAG Sanyo Semiconductor/ON Semiconductor	AFSM T6 40V LL U8FL	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies