Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
EMH2418R-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 24V 9A EMH8	2363
NVMFD5C470NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 36A S08FL	4
NTZD3152PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 20V 430MA SOT563	12468
NVMFD5489NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 4.5A 8DFN	13644500
FDC6321C Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 25V SSOT-6	1986
FDMS9620S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 8MLP PWR56	10494
2N7002DW Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 0.115A SC70-6	84279
FDZ1416NZ Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 4WLCSP	9135
FDG6303N Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 25V 500MA SC88	50217
FDS6912A Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC	4391
NTLUD4C26NTBG Sanyo Semiconductor/ON Semiconductor	MOSFET 2 N-CH 30V 9.1A 6UDFN	42000
NTMFD4901NFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 8DFN	0
FDG6322C Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 25V SC70-6	1658
NDC7001C Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 60V SSOT6	36913
FDS4935BZ Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 30V 6.9A 8SOIC	690
FDS8949-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 6A 8SOIC	0
NTMD6P02R2G Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 20V 4.8A 8SOIC	0
FDMD8540L Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 8POWER 5X6	0
FDMB2308PZ Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH MLP2X3	0
FDMS3606AS Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A POWER56	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies