Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
MSCSM120AM042CT6LIAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6C LI	6
TD9944TG-G Roving Networks / Microchip Technology	MOSFET 2N-CH 240V 8SOIC	1136
APTM10TAM19FPG Roving Networks / Microchip Technology	MOSFET 6N-CH 100V 70A SP6-P	0
TC8020K6-G-M937 Roving Networks / Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN	0
MSCSM70VM10C4AG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP4	9
APTM50HM65FT3G Roving Networks / Microchip Technology	MOSFET 4N-CH 500V 51A SP3	14
APTC60TAM35PG Roving Networks / Microchip Technology	MOSFET 6N-CH 600V 72A SP6-P	0
TC6215TG-G Roving Networks / Microchip Technology	MOSFET N/P-CH 150V 8SOIC	4908
TC8020K6-G Roving Networks / Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN	250
APTC60DDAM35T3G Roving Networks / Microchip Technology	MOSFET 2N-CH 600V 72A SP3	0
MSCSM70AM19CT1AG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP1F	21
MSCSM70AM025CT6LIAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6C LI	6
DN2625DK6-G Roving Networks / Microchip Technology	MOSFET 2N-CH 250V 1.1A 8VDFN	0
MIC5018BM4TR Roving Networks / Microchip Technology	HIGH-SIDE MOSFET DRIVER	2136
TC6321T-V/9U Roving Networks / Microchip Technology	MOSFET N/P-CH 200V 2A 8VDFN	0
MSCSM120TAM16CTPAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6P	0
MSCSM120HM31CT3AG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP3F	12
APTC60TDUM35PG Roving Networks / Microchip Technology	MOSFET 6N-CH 600V 72A SP6-P	0
TC1550TG-G Roving Networks / Microchip Technology	MOSFET N/P-CH 500V 8SOIC	5947
MSCSM120AM03CT6LIAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6C LI	3

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies