Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Image	Part Number	Description / PDF	Quantity	Rfq
	APTMC120TAM34CT3AG Roving Networks / Microchip Technology	POWER MODULE - SIC MOSFET	0
	APTMC120TAM17CTPAG Roving Networks / Microchip Technology	MOSFET 6N-CH 1200V 147A SP6P	0
	APTMC120HM17CT3AG Roving Networks / Microchip Technology	POWER MODULE - SIC MOSFET	0
	MSCMC120AM02CT6LIAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6C LI	0
	MSCMC120AM03CT6LIAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6C LI	0
	APTC90AM60T1G Roving Networks / Microchip Technology	MOSFET 2N-CH 900V 59A SP1	0
	APTMC120AM09CT3AG Roving Networks / Microchip Technology	MOSFET 2N-CH 1200V 295A SP3F	0
	APTMC120HRM40CT3AG Roving Networks / Microchip Technology	POWER MODULE - SIC MOSFET	0
	APTMC120AM12CT3AG Roving Networks / Microchip Technology	MOSFET 2N-CH 1200V 220A SP3F	0
	MSCMC120AM04CT6LIAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6C LI	0
	LN100LA-G Roving Networks / Microchip Technology	MOSFET 2N-CH 1200V	0
	APTMC60TLM14CAG Roving Networks / Microchip Technology	MOSFET 4N-CH 1200V 219A SP6C	0
	APTMC120AM20CT1AG Roving Networks / Microchip Technology	MOSFET 2N-CH 1200V 143A SP1	0
	APTMC120HR11CT3AG Roving Networks / Microchip Technology	POWER MODULE - SIC MOSFET	0
	MSCMC120AM07CT6LIAG Roving Networks / Microchip Technology	PM-MOSFET-SIC-SBD~-SP6C LI	0
	APTMC120TAM12CTPAG Roving Networks / Microchip Technology	MOSFET 6N-CH 1200V 220A SP6P	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies