Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Image	Part Number	Description / PDF	Quantity	Rfq
	UM5K1NTR ROHM Semiconductor	MOSFET 2N-CH 30V .1A SOT-353	0
	SP8K2FU6TB ROHM Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC	0
	SP8K22FU6TB ROHM Semiconductor	MOSFET 2N-CH 45V 4.5A 8SOIC	0
	SP8K5TB ROHM Semiconductor	MOSFET 2N-CH 30V 3.5A 8-SOIC	0
	SP8K32MB1TB1 ROHM Semiconductor	MOSFET 2N-CH 60V 8SOP	0
	SP8M3FU7TB1 ROHM Semiconductor	MOSFET N/P-CH 30V 8SOP	0
	SP8M7TB ROHM Semiconductor	MOSFET N/P-CH 30V 5A/7A 8SOIC	0
	SP8M6TB ROHM Semiconductor	MOSFET N/P-CH 30V 5A/3.5A 8SOIC	0
	SP8K3TB1 ROHM Semiconductor	MOSFET 2N-CH 30V 8SOP	0
	SP8K1TB ROHM Semiconductor	MOSFET 2N-CH 30V 5A 8-SOIC	0
	SP8M5FU6TB ROHM Semiconductor	MOSFET N/P-CH 30V 6A/7A 8SOIC	0
	TT8J1TR ROHM Semiconductor	MOSFET 2P-CH 12V 2.5A TSST8	0
	SP8J2FU6TB ROHM Semiconductor	MOSFET 2P-CH 30V 4.5A 8SOIC	0
	SP8J62TB1 ROHM Semiconductor	MOSFET 2P-CH 30V 8SOP	0
	SP8K33TB1 ROHM Semiconductor	MOSFET 2N-CH 60V 8SOP	0
	SP8M24MB4TB1 ROHM Semiconductor	MOSFET N/P-CH 8SOP	0
	SP8K3FD5TB1 ROHM Semiconductor	MOSFET 2N-CH 30V 8SOP	0
	SP8M24FU7TB1 ROHM Semiconductor	MOSFET N/P-CH 8SOP	0
	LP8M3FP8TB1 ROHM Semiconductor	MOSFET N-CH SOP8G	0
	SP8M3FD5TB1 ROHM Semiconductor	MOSFET N/P-CH 30V 8SOP	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies