Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
ITF86130SK8T

ITF86130SK8T

Intersil (Renesas Electronics America)

14A, 30V, 0.012OHM, N-CHANNEL ,

20000

ISL6605CB-TS2495

ISL6605CB-TS2495

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER,

2500

EL7222CSE9044-T7

EL7222CSE9044-T7

Intersil (Renesas Electronics America)

BUFFER/INVERTER BASED MOSFET DRI

97000

ISL6563CR-TK

ISL6563CR-TK

Intersil (Renesas Electronics America)

TWO-PHASE BUCK PWM CONTROLLER WI

912

ISL6605CR-TR5151

ISL6605CR-TR5151

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER,

6000

HIP2100IBTS2075

HIP2100IBTS2075

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER,

2500

ISL6594ACRZ-TR5212

ISL6594ACRZ-TR5212

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER,

6000

ISL6801ABTS2357

ISL6801ABTS2357

Intersil (Renesas Electronics America)

BUFFER/INVERTER BASED MOSFET DRI

57500

ISL6605CRR5151

ISL6605CRR5151

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER,

0

GWS9293

GWS9293

Intersil (Renesas Electronics America)

MOSFET 2 N-CH 20V 9.4A 4QFN

0

KGF6N05D-400

KGF6N05D-400

Intersil (Renesas Electronics America)

IC MOSFET N-CH

0

GWS4621L

GWS4621L

Intersil (Renesas Electronics America)

MOSFET 2N-CH

0

GWS9294

GWS9294

Intersil (Renesas Electronics America)

MOSFET 2 N-CH 20V 10.1A 4QFN

0

KGF16N05D-400

KGF16N05D-400

Intersil (Renesas Electronics America)

MOSFET N-CH 5.5V DUAL 20WLCSP

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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