Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
CAB400M12XM3 Wolfspeed - a Cree company	MOSFET 2 N-CH 1200V MODULE	0
CCS050M12CM2 Wolfspeed - a Cree company	MOSFET 6N-CH 1200V 87A MODULE	0
CAB425M12XM3 Wolfspeed - a Cree company	1.2KV, 425A SWITCHING LOSS OPTIM	0
CCS020M12CM2 Wolfspeed - a Cree company	MOSFET 6N-CH 1200V 29.5A MODULE	0
CAS300M12BM2 Wolfspeed - a Cree company	MOSFET 2N-CH 1200V 404A MODULE	0
CAS300M17BM2 Wolfspeed - a Cree company	MOSFET 2N-CH 1700V 325A MODULE	0
CAB450M12XM3 Wolfspeed - a Cree company	1.2KV 450A SIC HALF BRIDGE MOD	0
CAS325M12HM2 Wolfspeed - a Cree company	MOSFET 2N-CH 1200V 444A MODULE	0
CAS120M12BM2 Wolfspeed - a Cree company	MOSFET 2N-CH 1200V 193A MODULE	0
CAB011M12FM3 Wolfspeed - a Cree company	1200V SIC H-BRIDGE MODULE	0
CCB032M12FM3 Wolfspeed - a Cree company	1200V SIC 6-PACK MODULE	0
CAB016M12FM3 Wolfspeed - a Cree company	1200V SIC H-BRIDGE MODULE	0
CAS480M12HM3 Wolfspeed - a Cree company	1.2 KV, 480A HIGH PERFORMANCE SI	1
CCB021M12FM3 Wolfspeed - a Cree company	1200V SIC 6-PACK MODULE	0
CAB008M12GM3 Wolfspeed - a Cree company	1200V 2B HALF-BRIDGE	0
WAB300M12BM3 Wolfspeed - a Cree company	1200 V, 300 A HALF-BRIDGE MODULE	0
WAB400M12BM3 Wolfspeed - a Cree company	1200 V, 400 A HALF-BRIDGE MODULE	15
CAB760M12HM3 Wolfspeed - a Cree company	1.2 KV, 760A HIGH PERFORMANCE SI	0
CAB006M12GM3 Wolfspeed - a Cree company	1200V 2B HALF-BRIDGE	0
CAS100H12AM1 Wolfspeed - a Cree company	MOSFET 2N-CH 1200V 168A MODULE	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies