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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
TSM4946DCS RLG

TSM4946DCS RLG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CH 60V 4.5A 8SOP

4825
TQM250NB06DCR RLG

TQM250NB06DCR RLG

TSC (Taiwan Semiconductor)

60V, 30A, DUAL N-CHANNEL POWER M

5000
TSM110NB04LDCR RLG

TSM110NB04LDCR RLG

TSC (Taiwan Semiconductor)

DUAL N-CHANNEL POWER MOSFET 40V,

2500
TSM9926DCS RLG

TSM9926DCS RLG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CHANNEL 20V 6A 8SOP

275
TSM250N02DCQ RFG

TSM250N02DCQ RFG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CH 20V 5.8A 6TDFN

0
TSM110NB04DCR RLG

TSM110NB04DCR RLG

TSC (Taiwan Semiconductor)

DUAL N-CHANNEL POWER MOSFET 40V,

97
TSM6866SDCA RVG

TSM6866SDCA RVG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CH 20V 6A 8TSSOP

3476
TSM6968SDCA RVG

TSM6968SDCA RVG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CH 20V 6.5A 8TSSOP

4843
TSM500P02DCQ RFG

TSM500P02DCQ RFG

TSC (Taiwan Semiconductor)

MOSFET 2 P-CH 20V 4.7A 6TDFN

2925
TQM150NB04DCR RLG

TQM150NB04DCR RLG

TSC (Taiwan Semiconductor)

AUTOMOTIVE 40V MOSFET, 15M, DUAL

2500
TSM150NB04DCR RLG

TSM150NB04DCR RLG

TSC (Taiwan Semiconductor)

DUAL N-CHANNEL POWER MOSFET 40V,

5000
TQM110NB04DCR RLG

TQM110NB04DCR RLG

TSC (Taiwan Semiconductor)

40V, 50A, DUAL N-CHANNEL POWER M

5000
TSM300NB06DCR RLG

TSM300NB06DCR RLG

TSC (Taiwan Semiconductor)

DUAL N-CHANNEL POWER MOSFET 60V,

4950
TSM4936DCS RLG

TSM4936DCS RLG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CH 30V 5.9A 8SOP

12489
TSM8568CS RLG

TSM8568CS RLG

TSC (Taiwan Semiconductor)

MOSFET N/P-CH 30V 15A/13A 8SOP

22409
TSM680P06DPQ56 RLG

TSM680P06DPQ56 RLG

TSC (Taiwan Semiconductor)

MOSFET 2 P-CH 60V 12A 8PDFN

460
TSM250NB06LDCR RLG

TSM250NB06LDCR RLG

TSC (Taiwan Semiconductor)

DUAL N-CHANNEL POWER MOSFET 60V,

2500
TSM9933DCS RLG

TSM9933DCS RLG

TSC (Taiwan Semiconductor)

MOSFET 2 P-CH 20V 4.7A 8SOP

3589
TSM3911DCX6 RFG

TSM3911DCX6 RFG

TSC (Taiwan Semiconductor)

MOSFET 2 P-CH 20V 2.2A SOT26

26861
TSM4925DCS RLG

TSM4925DCS RLG

TSC (Taiwan Semiconductor)

MOSFET 2 P-CH 30V 7.1A 8SOP

6620

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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