Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
CPH3418-TL-H Sanyo Denki SanUPS Products	ULTRAHIGH-SPEED SWITCHING APPLIC	15000
MCH5802-TL-E Sanyo Denki SanUPS Products	P-CHANNEL SILICON MOSFET	57000
ECH8411-TL-E-SA Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	3000
FW256-TL-E Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	3000
CPH6413-TLD-E Sanyo Denki SanUPS Products	N-CHANNEL MOSFET	60000
2SJ635-E Sanyo Denki SanUPS Products	P-CHANNEL SILICON MOSFET	6833
TM3055-TL-E Sanyo Denki SanUPS Products	N-CHANNEL MOSFET	112000
CPH3314-TL-E Sanyo Denki SanUPS Products	P-CHANNEL SILICON MOSFET	468010
STMFS4854NST1G Sanyo Denki SanUPS Products	N CHANNEL MOSFET	10500
2SK4085LS-CBC11-SY Sanyo Denki SanUPS Products	N-CHANNEL MOSFET	4661
2SK2631-E Sanyo Denki SanUPS Products	POWER MOSFET	0
FW216-NMM-TL-E-SY Sanyo Denki SanUPS Products	N-CHANNEL MOSFET	32000
2SK3618-TL-E-SY Sanyo Denki SanUPS Products	N-CHANNEL MOSFET	9800
ECH8604-TL-E-SY Sanyo Denki SanUPS Products	N-CHANNEL MOSFET	24000
FX205-TL-E Sanyo Denki SanUPS Products	P-CHANNEL SILICON MOSFET	25000
CPH5616-TL-E Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	2978
2SK4085LS-CB11-SY Sanyo Denki SanUPS Products	N-CHANNEL MOSFET	32441
2SJ664-E-SY Sanyo Denki SanUPS Products	P-CHANNEL SILICON MOSFET	20397
2SK3436-TL-E Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	11858
2SJ655-MG5-SY Sanyo Denki SanUPS Products	GENERAL-PURPOSE SWITCHING DEVICE	17750

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies