ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
FS70KM-06#B00

FS70KM-06#B00

Renesas Electronics America

70A, 100V, N-CHANNEL MOSFET

115
UPA602T-T2-A

UPA602T-T2-A

Renesas Electronics America

SMALL SIGNAL FIELD-EFFECT TRANSI

54000
2SK3481(0)-Z-E1-AZ

2SK3481(0)-Z-E1-AZ

Renesas Electronics America

N-CHANNEL POWER MOSFET

1000
RJK03D3DPA-00#J53

RJK03D3DPA-00#J53

Renesas Electronics America

N CHANNEL 30V, 40A, POWER SWITCH

300000
FS50KM-06-AX#E51

FS50KM-06-AX#E51

Renesas Electronics America

DISCRETE / POWER MOSFET

522
RJK03R1DPA-00#J5A

RJK03R1DPA-00#J5A

Renesas Electronics America

N-CHANNEL MOSFET

1023000
FS10KMJ-2#B01

FS10KMJ-2#B01

Renesas Electronics America

HIGH SPEED SWITCHING N-CHANNEL

15334
UPA2352T1P-E4-A

UPA2352T1P-E4-A

Renesas Electronics America

2-ELEMENT, N-CHANNEL MOSFET

315000
UPA2690T1R-E2-AX

UPA2690T1R-E2-AX

Renesas Electronics America

MOSFET N/P-CH 20V 4A/3A 6SON

0
2SJ409-90STR

2SJ409-90STR

Renesas Electronics America

20A, 100V, P-CHANNEL MOSFET

5000
NP30N06QDK-E1-AY

NP30N06QDK-E1-AY

Renesas Electronics America

POWER TR2 AUTOMOTIVE MOS DUAL N-

0
UPA2562T1H-T1-AT

UPA2562T1H-T1-AT

Renesas Electronics America

POWER, 4.5A, 30V, N-CH MOSFET

9000
RJK03S3DPA-00#J5A

RJK03S3DPA-00#J5A

Renesas Electronics America

N-CHANNEL MOSFET

9000
UPA2451CTL-E1-A

UPA2451CTL-E1-A

Renesas Electronics America

SMALL SIGNAL N-CHANNEL MOSFET

392400
2SJ215-E

2SJ215-E

Renesas Electronics America

P-CHANNEL MOSFET

2626
FS10ASJ-2-T13#B00

FS10ASJ-2-T13#B00

Renesas Electronics America

HIGH SPEED SWITCHING N-CHANNEL

6000
RJK0230DPA-00#J5A

RJK0230DPA-00#J5A

Renesas Electronics America

POWER FIELD-EFFECT TRANSISTOR

213000
FS10KM-06-AV#B01

FS10KM-06-AV#B01

Renesas Electronics America

HIGH SPEED SWITCHING N-CHANNEL

48853
RJK0222DNS-00#J5

RJK0222DNS-00#J5

Renesas Electronics America

POWER FIELD-EFFECT TRANSISTOR

340000
2SK3113(0)-Z-E1-AZ

2SK3113(0)-Z-E1-AZ

Renesas Electronics America

N-CHANNEL POWER MOSFET SWITCHING

4000

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

RFQ BOM Call Skype Email
Top