Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AON4803

AON4803

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 20V 3.4A DFN3X2

0

SC8673040L

SC8673040L

Panasonic

MOSFET 2N-CH 30V 16A/46A 8-HSO

2987

SH8J66TB1

SH8J66TB1

ROHM Semiconductor

MOSFET 2P-CH 30V 9A SOP8

4413

FD6M045N06

FD6M045N06

N-CHANNEL POWER MOSFET

1409

BSZ076N06NS3G

BSZ076N06NS3G

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

14809

FTCO3V455A1

FTCO3V455A1

Sanyo Semiconductor/ON Semiconductor

MOSFET 6N-CH 40V 150A MODULE

142

AO7800

AO7800

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V SC70-6

0

IPG20N04S4L08AATMA1

IPG20N04S4L08AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 40V 20A 8TDSON

0

SP8M10FRATB

SP8M10FRATB

ROHM Semiconductor

4V DRIVE NCH+PCH MOSFET (AEC-Q10

2465

BSS138DW-7-F

BSS138DW-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 50V 0.2A SC70-6

0

EMH2308-TL-E

EMH2308-TL-E

TRANSISTOR

33000

FDS6911

FDS6911

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

3396

RM2520ES6

RM2520ES6

Rectron USA

MOSFET N&P-CH 25/20V SOT23-6

1000000

BUK9K45-100E,115

BUK9K45-100E,115

Nexperia

MOSFET 2N-CH 100V 21A LFPAK56D

0

BSS8402DWQ-7

BSS8402DWQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CH 60V/50V

0

CSD87588NT

CSD87588NT

Texas Instruments

MOSFET 2N-CH 30V 25A 5PTAB

1478

SIL2623-TP

SIL2623-TP

Micro Commercial Components (MCC)

MOSFET 2 P-CH 30V 3A SOT23-6L

0

BSL308PEL6327HTSA1

BSL308PEL6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL P-CHANNEL MOSFET

48310

EM6K33T2R

EM6K33T2R

ROHM Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

7480

SIZ328DT-T1-GE3

SIZ328DT-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CHAN 25V POWERPAIR

5960

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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