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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SP8M5FRATB

SP8M5FRATB

ROHM Semiconductor

4V DRIVE NCH+PCH MOSFET

1475
FDS8958B

FDS8958B

Sanyo Semiconductor/ON Semiconductor

MOSFET N/P-CH 30V 6.4/4.5A 8SOIC

637
2N7002PV,115

2N7002PV,115

Nexperia

MOSFET 2N-CH 60V 0.35A SOT-666

8788
2N7002PS,125

2N7002PS,125

Nexperia

MOSFET 2N-CH 60V 0.32A 6TSSOP

7644
BUK7K12-60EX

BUK7K12-60EX

Nexperia

MOSFET 2N-CH 60V 40A LFPAK

1531
DMN63D0LT-7

DMN63D0LT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V SOT523

0
SQJ200EP-T1_GE3

SQJ200EP-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 20A/60A PPAK SO

1229
DMC3025LSDQ-13

DMC3025LSDQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFETN/P-CH30VSO-8

889
ALD1101PAL

ALD1101PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

298
SIZ998DT-T1-GE3

SIZ998DT-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V 8-POWERPAIR

8473
NVMFD6H840NLWFT1G

NVMFD6H840NLWFT1G

Sanyo Semiconductor/ON Semiconductor

T8 80V LL SO8FL DS

0
DMC1029UFDB-13

DMC1029UFDB-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CH 12V 6UDFN

0
DMC1016UPD-13

DMC1016UPD-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 8V 24V POWERDI5060-8

399010000
DMG1016UDW-7

DMG1016UDW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CH 20V SOT363

0
FDMS3602S

FDMS3602S

POWER FIELD-EFFECT TRANSISTOR, 1

15137
NTMFD5C680NLT1G

NTMFD5C680NLT1G

Sanyo Semiconductor/ON Semiconductor

T6 60V LL SO8FL DUAL

0
NVMFD5853NWFT1G

NVMFD5853NWFT1G

N-CHANNEL, MOSFET

3000
ICL7667MJA/883B

ICL7667MJA/883B

Rochester Electronics

DUAL MARKED (5962-8766001PA)

4901
IRF3546MTRPBF

IRF3546MTRPBF

IR (Infineon Technologies)

DUAL PHASE POWIRBLOCK

3000
UP0187B00L

UP0187B00L

Panasonic

MOSFET 2N-CH 30V 0.1A SSMINI-5

6105

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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