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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF8313TRPBF

IRF8313TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 9.7A 8SO

11990
SSM6N62TU,LF

SSM6N62TU,LF

Toshiba Electronic Devices and Storage Corporation

SMALL SIGNAL MOSFET N-CH X 2 VDS

5401
AON2802

AON2802

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 2A 6DFN

0
TSM6866SDCA RVG

TSM6866SDCA RVG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CH 20V 6A 8TSSOP

3476
2N7002BKS,115

2N7002BKS,115

Nexperia

MOSFET 2N-CH 60V 0.3A 6TSSOP

167498
DMNH6021SPDQ-13

DMNH6021SPDQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2NCH 60V 8.2A POWERDI

2500
AOSD32334C

AOSD32334C

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 8-SOIC

897
AO6802

AO6802

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 3.5A 6-TSOP

0
PMDPB65UP,115

PMDPB65UP,115

NXP Semiconductors

SMALL SIGNAL P-CHANNEL MOSFET

13050
NVMD6N03R2G

NVMD6N03R2G

N-CHANNEL POWER MOSFET

4915
FDS8958A-F085

FDS8958A-F085

Sanyo Semiconductor/ON Semiconductor

MOSFET N/P-CH 30V 7A/5A 8SOIC

648045000
SQ4917EY-T1_GE3

SQ4917EY-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CHANNEL 60V 8A 8SO

946
IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

14427
DMN2990UDJ-7

DMN2990UDJ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 20V 0.45A SOT-963

0
TPIC1504DW

TPIC1504DW

Texas Instruments

SMALL SIGNAL FIELD-EFFECT TRANSI

100
MMDF2P02HDR2G

MMDF2P02HDR2G

SMALL SIGNAL P-CHANNEL MOSFET

1245
SI7913DN-T1-GE3

SI7913DN-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 5A PPAK 1212-8

2506
DMN33D8LDW-7

DMN33D8LDW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 30V 0.25A

1957151000
DMN1002UCA6-7

DMN1002UCA6-7

Zetex Semiconductors (Diodes Inc.)

MOSFETN-CHAN 12V X4-DSN3118-6

2147483647
SSM6P35FE(TE85L,F)

SSM6P35FE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

MOSFET 2P-CH 20V 0.1A ES6

28

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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