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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
NVLJD4007NZTAG

NVLJD4007NZTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 30V 245MA 6WDFN

310230000
ZXMN6A25DN8TA

ZXMN6A25DN8TA

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 60V 3.8A 8-SOIC

133
BUK9K12-60EX

BUK9K12-60EX

Nexperia

MOSFET 2N-CH 60V 35A 56LFPAK

0
FPF1C2P5BF07A

FPF1C2P5BF07A

INSULATED GATE BIPOLAR TRANSISTO

433
TSM9926DCS RLG

TSM9926DCS RLG

TSC (Taiwan Semiconductor)

MOSFET 2 N-CHANNEL 20V 6A 8SOP

275
SP8K32FRATB

SP8K32FRATB

ROHM Semiconductor

4V DRIVE NCH+NCH MOSFET (CORRESP

2486
IRF9956TRPBF

IRF9956TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 3.5A 8-SOIC

732
UPA1915TE(0)-T1-AT

UPA1915TE(0)-T1-AT

Renesas Electronics America

P-CHANNEL MOSFET

78000
BUK963R2-40B

BUK963R2-40B

Nexperia

PFET, 100A I(D), 40V, 0.0035OHM,

0
DMC3730UFL3-7

DMC3730UFL3-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CHA 30V 1.1A DFN1310

18336000
AOSD21307

AOSD21307

Alpha and Omega Semiconductor, Inc.

30V DUAL P-CHANNEL MOSFET

0
ZXMN2A04DN8TA

ZXMN2A04DN8TA

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 20V 5.9A 8-SOIC

0
BB304CDW-TL-E

BB304CDW-TL-E

Renesas Electronics America

RF N

6000
AON3818

AON3818

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 24V 8A

0
SP8K33FRATB

SP8K33FRATB

ROHM Semiconductor

4V DRIVE NCH+NCH MOSFET (CORRESP

2324
SI4936ADY-T1-E3

SI4936ADY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

2500
DMC3071LVT-7

DMC3071LVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET BVDSS: 25V-30V TSOT26 T&R

0
FDMS7606

FDMS7606

SMALL SIGNAL N-CHANNEL MOSFET

2540
SI4670DY-T1-GE3

SI4670DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

0
DMN62D0UT-7

DMN62D0UT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 60V 0.35A SOT523

2110

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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