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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI4804CDY-T1-GE3

SI4804CDY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

0
SIL2301-TP

SIL2301-TP

Micro Commercial Components (MCC)

P-CHANNEL,MOSFETS,SOT23-6L PACKA

25668
SH8M2TB1

SH8M2TB1

ROHM Semiconductor

MOSFET N/P-CH 30V 3.5A SOP8

174
AON7804

AON7804

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 9A 8DFN

0
STS8DN6LF6AG

STS8DN6LF6AG

STMicroelectronics

MOSFET 2 N-CHANNEL 60V 8A 8SO

5978
SI4204DY-T1-GE3

SI4204DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 19.8A 8-SOIC

7044
DMC3032LSD-13

DMC3032LSD-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CH 30V 8.1A/7A 8SOP

2709
IPG15N06S3L-45

IPG15N06S3L-45

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

19782
AO4840E

AO4840E

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 40V 6A 8SOIC

0
FDPC8014AS

FDPC8014AS

25V ASYMMETRIC DUAL N-CHANNEL PO

2043
BUK7K5R1-30E,115

BUK7K5R1-30E,115

Nexperia

MOSFET 2N-CH 30V 40A LFPAK56D

0
IRF7317TRPBF

IRF7317TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 20V 8-SOIC

16333
ALD210800PCL

ALD210800PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

0
BUK9K6R8-40EX

BUK9K6R8-40EX

Nexperia

MOSFET 2N-CH 40V 40A 56LFPAK

0
FDMD8240LET40

FDMD8240LET40

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 40V 24A POWER3.3X5

2290
TPS2013APWR

TPS2013APWR

Texas Instruments

HIGH-SIDE MOSFET SWITCH

0
DMN4034SSD-13

DMN4034SSD-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 40V 4.8A 8SO

132500
ULN2003V12PWR

ULN2003V12PWR

Texas Instruments

MOSFET 7CH 16TSSOP

2405
PSMN035-150B

PSMN035-150B

NXP Semiconductors

POWER FIELD-EFFECT TRANSISTOR, 5

0
SQJB40EP-T1_GE3

SQJB40EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK SO8

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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