Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DRA2152Z0L

DRA2152Z0L

Panasonic

TRANS PREBIAS PNP 200MW MINI3

6068

DRA5143E0L

DRA5143E0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

0

DRA5123Y0L

DRA5123Y0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

2608

DRC3144T0L

DRC3144T0L

Panasonic

TRANS PREBIAS NPN 100MW SSSMINI3

30315

UNR311300L

UNR311300L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

8202

DRC9124X0L

DRC9124X0L

Panasonic

TRANS PREBIAS NPN 125MW SSMINI3

6000

DRA5124T0L

DRA5124T0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

6000

DRA5152Z0L

DRA5152Z0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

6000

DRA5144V0L

DRA5144V0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

2970

UNR31AN00L

UNR31AN00L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

8607

DRC5124X0L

DRC5124X0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

2899

UNR411200A

UNR411200A

Panasonic

TRANS PREBIAS PNP 300MW NS-B1

8230

UNR411800A

UNR411800A

Panasonic

TRANS PREBIAS PNP 300MW NS-B1

4932

DRA5113Z0L

DRA5113Z0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

5615

DRA9144V0L

DRA9144V0L

Panasonic

TRANS PREBIAS PNP 125MW SSMINI3

5990

DRC5143Z0L

DRC5143Z0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

442

UNR31AMG0L

UNR31AMG0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

19967

UNR411L00A

UNR411L00A

Panasonic

TRANS PREBIAS PNP 300MW NS-B1

1780

UNR921MJ0L

UNR921MJ0L

Panasonic

TRANS PREBIAS NPN 125MW SSMINI3

5322

UNR911LJ0L

UNR911LJ0L

Panasonic

TRANS PREBIAS PNP 125MW SSMINI3

3000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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