Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DRA3115G0L

DRA3115G0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

10000

DRC2115G0L

DRC2115G0L

Panasonic

TRANS PREBIAS NPN 200MW MINI3

2880

UNR221000L

UNR221000L

Panasonic

TRANS PREBIAS NPN 200MW MINI3

192

UNR411300A

UNR411300A

Panasonic

TRANS PREBIAS PNP 300MW NS-B1

9670

DRA2143Y0L

DRA2143Y0L

Panasonic

TRANS PREBIAS PNP 200MW MINI3

2875

UNR411400A

UNR411400A

Panasonic

TRANS PREBIAS PNP 300MW NS-B1

2712

DRC5115G0L

DRC5115G0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

6000

UNR9217J0L

UNR9217J0L

Panasonic

TRANS PREBIAS NPN 125MW SSMINI3

5987

UNR32A0G0L

UNR32A0G0L

Panasonic

TRANS PREBIAS NPN 100MW SSSMINI3

19400

UNR31A300L

UNR31A300L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

7855

DRC3114W0L

DRC3114W0L

Panasonic

TRANS PREBIAS NPN 100MW SSSMINI3

8898

UNR921EJ0L

UNR921EJ0L

Panasonic

TRANS PREBIAS NPN 125MW SSMINI3

3000

DRA3114E0L

DRA3114E0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

18821

UNR9210J0L

UNR9210J0L

Panasonic

TRANS PREBIAS NPN 125MW SSMINI3

1206

DRC3144W0L

DRC3144W0L

Panasonic

TRANS PREBIAS NPN 100MW SSSMINI3

19548

UNR5215G0L

UNR5215G0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

3570

DRC5614T0L

DRC5614T0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

2925

DRA5115E0L

DRA5115E0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

3000

UNR51ANG0L

UNR51ANG0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

5610

UNR521NG0L

UNR521NG0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

5116

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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