Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTC114YTVL

PDTC114YTVL

Nexperia

PDTC114YT/SOT23/TO-236AB

0

PDTC143ZM,315

PDTC143ZM,315

Nexperia

TRANS PREBIAS NPN 50V DFN1006-3

0

PDTC143ZT,235

PDTC143ZT,235

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

78104

PDTC115TM,315

PDTC115TM,315

Nexperia

NOW NEXPERIA PDTC115TM - SMALL S

120000

PDTA143EQAZ

PDTA143EQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

PDTA124TM,315

PDTA124TM,315

Nexperia

NOW NEXPERIA PDTA124TM - SMALL S

190000

PDTA124EMB,315

PDTA124EMB,315

Nexperia

NOW NEXPERIA PDTA124EMB - SMALL

129990

NHDTC123JUX

NHDTC123JUX

Nexperia

NHDTC123JU/SOT323/SC-70

3000

PDTC115TT,215

PDTC115TT,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

0

PDTC143XM,315

PDTC143XM,315

Nexperia

TRANS PREBIAS NPN 250MW SOT883

0

PDTB123YT,215

PDTB123YT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

19818

PDTA113ET,215

PDTA113ET,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

0

PDTB143XUF

PDTB143XUF

Nexperia

TRANS PREBIAS PNP 0.425W

0

NHDTA123JUF

NHDTA123JUF

Nexperia

NHDTA123JU/SOT323/SC-70

9995

PBRN123YT,215

PBRN123YT,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

14786

PDTD123TT,215

PDTD123TT,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

18

PDTA144TU,115

PDTA144TU,115

Nexperia

NOW NEXPERIA PDTA144TU - SMALL S

143980

PDTA123TT,215

PDTA123TT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

0

PDTA143ZT,215

PDTA143ZT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

8604

NHDTA144EUX

NHDTA144EUX

Nexperia

NHDTA144EU/SOT323/SC-70

3000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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