Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - Single

Part Number	Description / PDF	Quantity
2SB1220GRL Panasonic	TRANS PNP 150V 0.05A SMINI-3	5965
2SC54190RA Panasonic	TRANS NPN 300V 0.07A MT-2	1931
2SC4809J0L Panasonic	TRANS NPN 10V 0.05A SSMINI-3P	163
2SC593900L Panasonic	TRANS NPN 10V 0.05A SSSMINI-3	8618
DSCQ00100L Panasonic	TRANS NPN 50V 0.1A USSMINI3	6009
2SB0942AP Panasonic	TRANS PNP 80V 4A TO-220F	21
DSA710100L Panasonic	TRANS PNP 80V 0.5A MINIP-3	173
2SC5939G0L Panasonic	TRANS NPN 10V 0.05A SSSMINI-3	6508
2SD2138AQA Panasonic	TRANS NPN DARL 80V 2A MT-4	465
DSC7Q01S0L Panasonic	TRANS NPN DARL 80V 1A MINIP3	855
2SB1440GRL Panasonic	TRANS PNP 50V 2A MINI-PWR	60
2SB09680RL Panasonic	TRANS PNP 40V 1.5A U-G2	2967
DSA7503R0L Panasonic	TRANS PNP 20V 1A MINIP3	840
2SA2174J0L Panasonic	TRANS PNP 50V 0.1A SSMINI-3	2932
DSC2002S0L Panasonic	TRANS NPN 50V 0.5A MINI3	1
XN09D5700L Panasonic	TRANS PNP 15V 2.5A MINI 6P	2876
2SB0709AQL Panasonic	TRANS PNP 45V 0.1A MINI 3P	300
2SC14730RA Panasonic	TRANS NPN 200V 0.07A TO-92	2757
2SA15320CL Panasonic	TRANS PNP 20V 0.03A SMINI-3P	193
DSA7504R0L Panasonic	TRANS PNP 20V 4A MINIP3	920

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

Type	Functional Characteristics	Application Examples
NPN Transistor	Majority carriers: electrons. Requires positive base current for conduction.	Low-noise amplifiers, digital logic circuits
PNP Transistor	Majority carriers: holes. Conducts with negative base current.	Power supply circuits, motor controllers
High-Frequency BJT	Optimized for RF/microwave signal amplification (f_T > 100 MHz)	Wireless communication systems, radar
Power BJT	High current/voltage ratings (I_C > 1A, V_CE > 50V)	Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

Emitter: Heavily doped region emitting charge carriers
Base: Thin, lightly doped middle region controlling carrier flow
Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

Parameter	Description	Importance
Current Gain (h_FE)	Ratio of collector to base current (10-1000)	Determines amplification capability
Transition Frequency (f_T)	Frequency at which current gain drops to 1	Limits high-frequency performance
Max Collector Current (I_Cmax)	Maximum allowable continuous collector current	Defines power handling capability
Breakdown Voltage (V_CEO)	Max voltage between collector and emitter	Prevents device failure under stress
Saturation Voltage (V_CEsat)	Voltage drop in fully conducting state	Affects power efficiency in switching

5. Application Areas

Consumer Electronics: Audio amplifiers, LED drivers
Automotive: Engine control units, electric vehicle inverters
Industrial: PLCs, motor controllers
Telecommunications: RF power amplifiers, fiber optic transceivers
Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

Manufacturer	Product Series	Key Specifications	Typical Use
ON Semiconductor	2N3904	hFE: 100-300, fT: 300 MHz	General-purpose switching
Infineon	BC547	VCEO: 50V, ICmax: 100mA	Analog signal amplification
STMicroelectronics	2SD2656	ICmax: 15A, VCEO: 80V	Power inverter applications
Diodes Inc.	BFR93A	fT: 10 GHz, Noise Figure: 2dB	High-frequency front-end amplifiers

7. Selection Guidelines

Determine operating frequency: Select fT > 3 target frequency
Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
Thermal considerations: Calculate power dissipation (P=V_CE I_C)
Package type: TO-92 for low power, TO-220 for high-power applications
Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

High-frequency BJTs operating beyond 100 GHz for 6G communication
Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
Wide-bandgap materials (SiC/GaN) for higher power density
Miniaturization through chip-scale packaging
Improved thermal management solutions for automotive applications