Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PHPT61002PYCX

PHPT61002PYCX

Nexperia

TRANS PNP 100V 2A LFPAK56 PWRSO8

1130

PBSS5612PA,115

PBSS5612PA,115

Nexperia

TRANS PNP 12V 6A 3HUSON

1738

PBSS301NX,115

PBSS301NX,115

Nexperia

TRANS NPN 12V 5.3A SOT89

748

BCX70K,215

BCX70K,215

Nexperia

TRANS NPN 45V 100MA TO236AB

14167

BCP53-16HX

BCP53-16HX

Nexperia

BCP53H SERIES - 80V, 1A PNP MEDI

79000

PHPT60606NYX

PHPT60606NYX

Nexperia

TRANS NPN BIPO 60V 6A 8LFPAK

912

BC858B,235

BC858B,235

Nexperia

TRANS PNP 30V 100MA TO236AB

9928

PZT2222A,115

PZT2222A,115

Nexperia

TRANS NPN 40V 0.6A SOT223

155785

PBSS4160QAZ

PBSS4160QAZ

Nexperia

TRANS NPN 60V 1A 3DFN

0

BCW72,235

BCW72,235

Nexperia

TRANS NPN 45V 100MA TO236AB

0

PBSS4330X,115

PBSS4330X,115

Nexperia

TRANS NPN 30V 3A SOT89

22492

2PB709ARL,235

2PB709ARL,235

Nexperia

2PB709A - 45 V, 100 MA PNP GENER

10000

PMBTA64,215

PMBTA64,215

Nexperia

TRANS PNP DARL 30V 500MA TO236AB

1686

PBSS301PZ,135

PBSS301PZ,135

Nexperia

TRANS PNP 12V 5.7A SOT223

3685

PMBTA42,215

PMBTA42,215

Nexperia

TRANS NPN 300V 100MA TO236AB

31184

PBSS5580PA,115

PBSS5580PA,115

Nexperia

TRANS PNP 80V 4A 3HUSON

0

BC51-16PASX

BC51-16PASX

Nexperia

NOW NEXPERIA BC51-16PASX - SMALL

72000

BC817-40QAZ

BC817-40QAZ

Nexperia

TRANS NPN 45V 0.5A DFN1010D-3

0

BCP54-10TF

BCP54-10TF

Nexperia

BCP54-10T/SOT223/SC-73

0

BC807-16HZ

BC807-16HZ

Nexperia

BC807-16H/SOT23/TO-236AB

29800

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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