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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMST3904-TP

MMST3904-TP

Micro Commercial Components (MCC)

TRANS NPN 40V 0.2A SOT323

1
MMST3906-TP

MMST3906-TP

Micro Commercial Components (MCC)

TRANS PNP 40V 0.2A SOT323

0
TIP32C-BP

TIP32C-BP

Micro Commercial Components (MCC)

TRANS PNP 100V 3A TO-220

712
MMBT4401-TP

MMBT4401-TP

Micro Commercial Components (MCC)

TRANS NPN 40V 0.6A SOT23

156896
MJD112-TP

MJD112-TP

Micro Commercial Components (MCC)

TRANS NPN 100V 2A DPAK

0
2N3906-AP

2N3906-AP

Micro Commercial Components (MCC)

TRANS PNP 40V 0.2A TO92

15007
MPSA05-AP

MPSA05-AP

Micro Commercial Components (MCC)

TRANS NPN 60V 0.625A TO-92

0
MMSTA42-TP

MMSTA42-TP

Micro Commercial Components (MCC)

TRANS NPN 300V 0.2A SOT323

0
TIP101-BP

TIP101-BP

Micro Commercial Components (MCC)

TRANS NPN DARL 80V 8A TO-220

0
BC847AT-TP

BC847AT-TP

Micro Commercial Components (MCC)

TRANS NPN 45V 0.1A SOT-523

0
TIP32-BP

TIP32-BP

Micro Commercial Components (MCC)

TRANS PNP 40V 3A TO-220

0
MMSS8550-L-TP

MMSS8550-L-TP

Micro Commercial Components (MCC)

TRANS PNP 25V 1.5A SOT-23

692
BC807-25-TP

BC807-25-TP

Micro Commercial Components (MCC)

TRANS PNP 45V 0.5A SOT-23

10189
MMBT3904T-TP

MMBT3904T-TP

Micro Commercial Components (MCC)

TRANS NPN 40V 0.2A SOT-523

0
MPSA43-AP

MPSA43-AP

Micro Commercial Components (MCC)

TRANS NPN 200V 0.3A TO-92

17403
BC848C-TP

BC848C-TP

Micro Commercial Components (MCC)

TRANS NPN 30V 0.1A SOT-23

0
MMBTA06-TP

MMBTA06-TP

Micro Commercial Components (MCC)

TRANS NPN 80V 0.5A SOT23

40560
BCX56-TP

BCX56-TP

Micro Commercial Components (MCC)

NPN,TRANSISTORS,SOT-89 PACKAGE

1504
2SA1213-Y-TP

2SA1213-Y-TP

Micro Commercial Components (MCC)

TRANS PREBIAS PNP 50V SOT89

0
TIP31C-BP

TIP31C-BP

Micro Commercial Components (MCC)

TRANS NPN 100V 3A TO-220AB

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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