Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
JANSR2N3700UB

JANSR2N3700UB

Roving Networks / Microchip Technology

RH SMALL-SIGNAL BJT

0

JANTXV2N3879

JANTXV2N3879

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TRANS NPN 75V 7A TO-66

0

2N5004

2N5004

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NPN SILICON TRANSISTOR

0

2N333ALT2

2N333ALT2

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NPN POWER SILICON TRANSISTORS

0

2N2906AUA

2N2906AUA

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TRANS PNP 60V 0.6A

0

JANTXV2N3506L

JANTXV2N3506L

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TRANS NPN 40V 3A TO5

0

JAN2N3741

JAN2N3741

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TRANS PNP 80V 4A TO-66

0

2N4906

2N4906

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NPN SILICON TRANSISTOR

0

2N4913

2N4913

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NPN SILICON TRANSISTOR

0

JANTX2N6193

JANTX2N6193

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NPN TRANSISTOR

0

JANTX2N5152

JANTX2N5152

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TRANS NPN 80V 2A TO39

0

JANTX2N5238S

JANTX2N5238S

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TRANS NPN 170V 10A TO39

0

JANTX2N5660

JANTX2N5660

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TRANS NPN 200V 2A TO-66

0

JANTXV2N3766

JANTXV2N3766

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TRANS NPN 60V 4A

0

JANTXV2N6437

JANTXV2N6437

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TRANS PNP 100V 25A

0

JANTX2N5157

JANTX2N5157

Roving Networks / Microchip Technology

TRANS NPN 500V 3.5A TO3

0

2N5348

2N5348

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PNP TRANSISTORS

0

JANTX2N918

JANTX2N918

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TRANS NPN 15V 0.05A

0

JAN2N6306

JAN2N6306

Roving Networks / Microchip Technology

TRANS NPN 250V 8A TO3

0

JAN2N5002

JAN2N5002

Roving Networks / Microchip Technology

TRANS NPN 80V 5A TO59

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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