Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SB1730TL

2SB1730TL

ROHM Semiconductor

TRANS PNP 12V 2A TUMT3

0

2SB1189T100R

2SB1189T100R

ROHM Semiconductor

TRANS PNP 80V 0.7A SOT-89

1900

2SAR512P5T100

2SAR512P5T100

ROHM Semiconductor

PNP -30V -2A MEDIUM POWER TRANSI

1183

2SC2412KT146S

2SC2412KT146S

ROHM Semiconductor

TRANS NPN 50V 0.15A SOT-346

1819

2SD2707T2LV

2SD2707T2LV

ROHM Semiconductor

TRANS NPN 50V 0.15A VMT3

6906

2SA1727TLQ

2SA1727TLQ

ROHM Semiconductor

TRANS PNP 400V 0.5A SOT-428

0

2SA1952TLQ

2SA1952TLQ

ROHM Semiconductor

TRANS PNP 60V 5A SOT-428

3411

2SB1386T100R

2SB1386T100R

ROHM Semiconductor

TRANS PNP 20V 5A SOT-89

835

2SD2143TL

2SD2143TL

ROHM Semiconductor

TRANS NPN DARL 60V 2A SOT-428

3152

2SB1706TL

2SB1706TL

ROHM Semiconductor

TRANS PNP 30V 2A TSMD3

1241

2SB1181TLQ

2SB1181TLQ

ROHM Semiconductor

TRANS PNP 80V 1A SOT-428

143

2SC4081UBTLR

2SC4081UBTLR

ROHM Semiconductor

TRANS NPN 50V 0.15A UMT3F

2400

2SB1427T100E

2SB1427T100E

ROHM Semiconductor

TRANS PNP 20V 2A SOT-89

465

2SD2098T100R

2SD2098T100R

ROHM Semiconductor

TRANS NPN 20V 5A SOT-89

3498

2SCR553PFRAT100

2SCR553PFRAT100

ROHM Semiconductor

NPN DRIVER TRANSISTOR (CORRESPON

1288

UML6NTR

UML6NTR

ROHM Semiconductor

TRANS NPN 12V 0.5A UMT6

5395

2SAR533PT100

2SAR533PT100

ROHM Semiconductor

TRANS PNP 50V 3A SOT-89

390

2SAR502UBTL

2SAR502UBTL

ROHM Semiconductor

TRANS PNP 30V 0.5A UMT3F

521

QSL12TR

QSL12TR

ROHM Semiconductor

TRANS NPN 30V 1A TSMT5

2987

2SAR512RTL

2SAR512RTL

ROHM Semiconductor

TRANS PNP 30V 2A TSMT3

5588

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top