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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC849CWE6327HTSA1

BC849CWE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 30V 0.1A SOT-323

0
BCW 66H B6327

BCW 66H B6327

IR (Infineon Technologies)

TRANS NPN 45V 0.8A SOT-23

0
BCX56E6327HTSA1

BCX56E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 80V 1A SOT-89

0
BC 807-40 E6433

BC 807-40 E6433

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT-23

0
BCX55E6327HTSA1

BCX55E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 60V 1A SOT-89

0
BSP51H6327XTSA1

BSP51H6327XTSA1

IR (Infineon Technologies)

TRANS NPN DARL 60V 1A SOT223

0
BC858BL3E6327

BC858BL3E6327

IR (Infineon Technologies)

TRANS PNP 30V 0.1A SOT23

0
BC850CWE6327HTSA1

BC850CWE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-323

0
ICA21V06X1SA1

ICA21V06X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
ICA21V01X1SA1

ICA21V01X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
CHIPT0204GUE6327X6SA1

CHIPT0204GUE6327X6SA1

IR (Infineon Technologies)

CHIP T0204GU E6327 DIE

0
ICA32V21X1SA1

ICA32V21X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
ICD22V05X1SA1

ICD22V05X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
ICA32V07X1SA1

ICA32V07X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
FZ1800R16KF4S1NOSA1

FZ1800R16KF4S1NOSA1

IR (Infineon Technologies)

IGBT MODULE

0
IMIC22V01X6SA2

IMIC22V01X6SA2

IR (Infineon Technologies)

CHIP BARE DIE

0
ICA32V08X1SA1

ICA32V08X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
ICA32V24X1SA1

ICA32V24X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
ICA32V22X1SA1

ICA32V22X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0
ICA32V11X1SA1

ICA32V11X1SA1

IR (Infineon Technologies)

CHIP BARE DIE

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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