Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2PC4081S/ZLX

2PC4081S/ZLX

NXP Semiconductors

TRANS NPN GEN PURP SC70

0

BUK7Y41-80E/GFX

BUK7Y41-80E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK9Y43-60E/GFX

BUK9Y43-60E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK9Y25-60E/GFX

BUK9Y25-60E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

PMSTA3904/LF1X

PMSTA3904/LF1X

NXP Semiconductors

TRANS NPN 40V 0.2A SOT323

0

BUK9675-100A/C1J

BUK9675-100A/C1J

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK7Y43-60E/GFX

BUK7Y43-60E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK9Y3R0-40E/GFX

BUK9Y3R0-40E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

2PB710ASL/ZLR

2PB710ASL/ZLR

NXP Semiconductors

TRANS PNP GEN PURP SOT346

0

BC856W/ZLX

BC856W/ZLX

NXP Semiconductors

TRANSISTOR

0

2PC4081R/ZLX

2PC4081R/ZLX

NXP Semiconductors

TRANS NPN GEN PURP SC70

0

PMST2369/ZLX

PMST2369/ZLX

NXP Semiconductors

TRANS NPN SWITCHING SOT323

0

BUK9Y12-40E/GFX

BUK9Y12-40E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

PMST2369/ZLF

PMST2369/ZLF

NXP Semiconductors

TRANS NPN SWITCHING SOT323

0

BUK7Y7R6-40E/GFX

BUK7Y7R6-40E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK9K29-100E/CX

BUK9K29-100E/CX

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK9Y3R0-40E/CX

BUK9Y3R0-40E/CX

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK9Y30-75B/C1,115

BUK9Y30-75B/C1,115

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK9Y7R6-40E/GFX

BUK9Y7R6-40E/GFX

NXP Semiconductors

MOSFET N-CH LFPAK

0

BUK762R9-40E/GFJ

BUK762R9-40E/GFJ

NXP Semiconductors

MOSFET N-CH D2PAK

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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