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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N2222A PBFREE

2N2222A PBFREE

Central Semiconductor

TRANS NPN 40V 0.8A TO-18

2147483647
2N4036 PBFREE

2N4036 PBFREE

Central Semiconductor

TRANS PNP 65V 1A TO-39

1348
2N6431 PBFREE

2N6431 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-SMALL SI

0
TIP31C SL PBFREE

TIP31C SL PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-BIPOLAR

0
2N3440 PBFREE

2N3440 PBFREE

Central Semiconductor

TRANS NPN 250V TO-39

1976
CMPTA56 TR PBFREE

CMPTA56 TR PBFREE

Central Semiconductor

TRANS PNP 80V 0.5A SOT23

9333
2N3392 PBFREE

2N3392 PBFREE

Central Semiconductor

TRANS NPN 25V TO-92

5021
PN2907A PBFREE

PN2907A PBFREE

Central Semiconductor

TRANS PNP 60V 0.6A TO-92

6586
TIP30 PBFREE

TIP30 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-BIPOLAR

0
2N3253 TIN/LEAD

2N3253 TIN/LEAD

Central Semiconductor

TRANS NPN 75V 500NA TO39

0
CXT3019 TR PBFREE

CXT3019 TR PBFREE

Central Semiconductor

TRANS NPN 80V 1A SOT89

4323
2N2907A PBFREE

2N2907A PBFREE

Central Semiconductor

TRANS PNP 60V 0.6A TO-18

11741
2N4399 PBFREE

2N4399 PBFREE

Central Semiconductor

TRANS PNP 60V 30A TO-3

0
2N2219 PBFREE

2N2219 PBFREE

Central Semiconductor

TRANS NPN 30V 0.8A TO-39

1444
2N3791 PBFREE

2N3791 PBFREE

Central Semiconductor

TRANS PNP 60V 10A TO-3

109
2N4424 PBFREE

2N4424 PBFREE

Central Semiconductor

TRANS NPN 40V 0.5A TO-92

7098
BC846BT TR PBFREE

BC846BT TR PBFREE

Central Semiconductor

TRANS NPN 65V 0.1A SOT523

577269000
BCY59-VII PBFREE

BCY59-VII PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-SMALL SI

0
2N2904 PBFREE

2N2904 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-SMALL SI

0
CZT2907A BK PBFREE

CZT2907A BK PBFREE

Central Semiconductor

TRANS PNP 60V 0.6A SOT223

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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