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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
CXTA14 TR PBFREE

CXTA14 TR PBFREE

Central Semiconductor

TRANS NPN DARL 30V 0.5A SOT89

2147483647
TIP117 PBFREE

TIP117 PBFREE

Central Semiconductor

TRANS NPN 100V TO220

0
2N3585 PBFREE

2N3585 PBFREE

Central Semiconductor

TRANS NPN 300V 2A TO-66

56
CMPT5551 TR PBFREE

CMPT5551 TR PBFREE

Central Semiconductor

TRANS NPN 160V 0.6A SMT

1411
CBCX69 TR PBFREE

CBCX69 TR PBFREE

Central Semiconductor

TRANS PNP 25V SOT89

1343
2N5322 PBFREE

2N5322 PBFREE

Central Semiconductor

TRANS PNP 75V 2A TO-39

1260
TIP31 PBFREE

TIP31 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-BIPOLAR

1600
2N4037 PBFREE

2N4037 PBFREE

Central Semiconductor

TRANS PNP 40V 1A TO-39

3250
BC856BT TR PBFREE

BC856BT TR PBFREE

Central Semiconductor

TRANS PNP 80V SOT523

752851000
TIP41C PBFREE

TIP41C PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
PN2222A PBFREE

PN2222A PBFREE

Central Semiconductor

TRANS NPN 40V 0.8A TO-92

31608
PN3565 PBFREE

PN3565 PBFREE

Central Semiconductor

TRANS NPN 25V 0.05A TO-92

755
2N3053 PBFREE

2N3053 PBFREE

Central Semiconductor

TRANS NPN 40V 0.7A TO-39

870
TIP29 PBFREE

TIP29 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
CENW42

CENW42

Central Semiconductor

TRANS NPN 300V 0.5A TO237

0
CMPT2369 TR PBFREE

CMPT2369 TR PBFREE

Central Semiconductor

TRANS NPN 15V 0.5A SOT-23

0
2N3416 PBFREE

2N3416 PBFREE

Central Semiconductor

TRANS NPN 50V TO-92

3894
TIP102 PBFREE

TIP102 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
CMST3904 BK PBFREE

CMST3904 BK PBFREE

Central Semiconductor

TRANS NPN 40V 0.2A SOT-323

0
TIP31A PBFREE

TIP31A PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-BIPOLAR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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