Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BUJ103A,127

BUJ103A,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BUJ103A - POWER BIPOL

76800

BUJ105A,127

BUJ105A,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BUJ105A - POWER BIPOL

8911

BUJ303AX,127

BUJ303AX,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BUJ303AX - POWER BIPO

10101

BUJ100,126

BUJ100,126

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 1A TO92

0

PHE13007,127

PHE13007,127

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 8A TO220AB

4157

PHE13005,127

PHE13005,127

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 4A TO220AB

1473

BUJ403A,127

BUJ403A,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BUJ403A - POWER BIPOL

8566

BUJ302AD,118

BUJ302AD,118

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 4A DPAK

128

PHE13003C,126

PHE13003C,126

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 1.5A TO92-3

11091

PHD13005,127

PHD13005,127

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 4A TO220AB

3919

PHD13003C,412

PHD13003C,412

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 1.5A TO92-3

9745

BUJ100,412

BUJ100,412

WeEn Semiconductors Co., Ltd

NOW WEEN - BUJ100 - POWER BIPOLA

5000

BUJ105AB,118

BUJ105AB,118

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 8A D2PAK

0

BUJ303A,127

BUJ303A,127

WeEn Semiconductors Co., Ltd

TRANS NPN 500V 5A TO220AB

6778

BUJD203AX,127

BUJD203AX,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BUJD203AX - POWER BIP

1000

TB100EP

TB100EP

WeEn Semiconductors Co., Ltd

TB100/TO-92/STANDARD MARKING *

0

TB100ML

TB100ML

WeEn Semiconductors Co., Ltd

TB100/TO-92/STANDARD MARKING *

0

PHE13005X,127

PHE13005X,127

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 4A TO-220F

0

PHE13003C,412

PHE13003C,412

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 1.5A TO92-3

0

PHE13009,127

PHE13009,127

WeEn Semiconductors Co., Ltd

TRANS NPN 400V 12A TO220AB

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top