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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC817-16 RFG

BC817-16 RFG

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 45V, 0.5A, 100A

0
MMBT2222A RFG

MMBT2222A RFG

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 40V, 0.6A, 50A/

4362
BC550C B1G

BC550C B1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 45V, 0.1A, 420A

0
BC847A RFG

BC847A RFG

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 45V, 0.1A, 110A

0
BC856B RFG

BC856B RFG

TSC (Taiwan Semiconductor)

TRANSISTOR, PNP, -65V, -0.1A, 22

0
BC548C A1G

BC548C A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 30V, 0.1A, 420A

0
BC548A B1G

BC548A B1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 30V, 0.1A, 110A

0
BC338-25 A1G

BC338-25 A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 25V, 0.8A, 160A

0
BC338-16 B1G

BC338-16 B1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 25V, 0.8A, 100A

0
KTC3198-GR B1G

KTC3198-GR B1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 50V, 0.15A, 120

0
TSA894CT B0G

TSA894CT B0G

TSC (Taiwan Semiconductor)

TRANSISTOR, PNP, -500V, -0.15A,

0
TSC5804DCP ROG

TSC5804DCP ROG

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 450V, 5A, 25A/A

0
BC549B B1G

BC549B B1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 30V, 0.1A, 200A

0
BC546A A1G

BC546A A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 65V, 0.1A, 110A

0
TSC5802DCP ROG

TSC5802DCP ROG

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 450V, 2.5A, 18A

0
BC550C A1G

BC550C A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 45V, 0.1A, 420A

0
BC550B A1G

BC550B A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 45V, 0.1A, 200A

0
BC546C A1G

BC546C A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 65V, 0.1A, 420A

0
BC546A B1G

BC546A B1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 65V, 0.1A, 110A

0
BC807-25 RFG

BC807-25 RFG

TSC (Taiwan Semiconductor)

TRANSISTOR, PNP, -45V, -0.5A, 16

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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