Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - Single

Part Number	Description / PDF	Quantity
2SC4117-BL,LF Toshiba Electronic Devices and Storage Corporation	TRANS NPN 120V 0.1A SOT323	20789
2SC5200-O(Q) Toshiba Electronic Devices and Storage Corporation	TRANS NPN 230V 15A TO-3PL	0
2SA1362-GR,LF Toshiba Electronic Devices and Storage Corporation	PNP TRANSISTOR VCEO-15V IC-0.8A	5905
2SA1163-BL,LF Toshiba Electronic Devices and Storage Corporation	TRANS PNP 120V 0.1A S-MINI	20996
TTA003,L1NQ(O Toshiba Electronic Devices and Storage Corporation	TRANS PNP 80V 3A PW-MOLD	0
2SC6026CTGRTPL3 Toshiba Electronic Devices and Storage Corporation	TRANS NPN 50V 0.1A CST3	0
2SA1588-O,LF Toshiba Electronic Devices and Storage Corporation	TRANS PNP 30V 0.5A USM	0
2SC3325-O(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS NPN 50V 0.5A S-MINI	1839
2SC2713-GR,LF Toshiba Electronic Devices and Storage Corporation	TRANS NPN 120V 0.1A S-MINI	5404
2SA2154CT-GR,L3F Toshiba Electronic Devices and Storage Corporation	TRANS PNP 50V 0.1A	0
TTA0002(Q) Toshiba Electronic Devices and Storage Corporation	TRANS PNP 160V 18A TO-3PL	0
2SC4944-GR(TE85L,F Toshiba Electronic Devices and Storage Corporation	TRANS NPN 50V 0.15A USV	3368
2SA1721OTE85LF Toshiba Electronic Devices and Storage Corporation	TRANS PNP 300V 100MA TO236-3	0
2SC3324GRTE85LF Toshiba Electronic Devices and Storage Corporation	TRANS NPN 120V 0.1A S-MINI	11834
TBC857B,LM Toshiba Electronic Devices and Storage Corporation	X34 PB-F SOT-23 TRANSISTOR FOR L	3748
2SC5242-O(Q) Toshiba Electronic Devices and Storage Corporation	TRANS NPN 230V 15A TO-3PN	8
2SC2712-GR,LF Toshiba Electronic Devices and Storage Corporation	TRANS NPN 50V 0.15A S-MINI	4585
TTA004B,Q Toshiba Electronic Devices and Storage Corporation	TRANS PNP 160V 1.5A TO126N	1361
2SC6026CT-Y(TPL3) Toshiba Electronic Devices and Storage Corporation	TRANS NPN 50V 0.1A CST3	252
2SC3303-Y(T6L1,NQ) Toshiba Electronic Devices and Storage Corporation	TRANS NPN 80V 5A PW-MOLD	0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

Type	Functional Characteristics	Application Examples
NPN Transistor	Majority carriers: electrons. Requires positive base current for conduction.	Low-noise amplifiers, digital logic circuits
PNP Transistor	Majority carriers: holes. Conducts with negative base current.	Power supply circuits, motor controllers
High-Frequency BJT	Optimized for RF/microwave signal amplification (f_T > 100 MHz)	Wireless communication systems, radar
Power BJT	High current/voltage ratings (I_C > 1A, V_CE > 50V)	Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

Emitter: Heavily doped region emitting charge carriers
Base: Thin, lightly doped middle region controlling carrier flow
Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

Parameter	Description	Importance
Current Gain (h_FE)	Ratio of collector to base current (10-1000)	Determines amplification capability
Transition Frequency (f_T)	Frequency at which current gain drops to 1	Limits high-frequency performance
Max Collector Current (I_Cmax)	Maximum allowable continuous collector current	Defines power handling capability
Breakdown Voltage (V_CEO)	Max voltage between collector and emitter	Prevents device failure under stress
Saturation Voltage (V_CEsat)	Voltage drop in fully conducting state	Affects power efficiency in switching

5. Application Areas

Consumer Electronics: Audio amplifiers, LED drivers
Automotive: Engine control units, electric vehicle inverters
Industrial: PLCs, motor controllers
Telecommunications: RF power amplifiers, fiber optic transceivers
Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

Manufacturer	Product Series	Key Specifications	Typical Use
ON Semiconductor	2N3904	hFE: 100-300, fT: 300 MHz	General-purpose switching
Infineon	BC547	VCEO: 50V, ICmax: 100mA	Analog signal amplification
STMicroelectronics	2SD2656	ICmax: 15A, VCEO: 80V	Power inverter applications
Diodes Inc.	BFR93A	fT: 10 GHz, Noise Figure: 2dB	High-frequency front-end amplifiers

7. Selection Guidelines

Determine operating frequency: Select fT > 3 target frequency
Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
Thermal considerations: Calculate power dissipation (P=V_CE I_C)
Package type: TO-92 for low power, TO-220 for high-power applications
Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

High-frequency BJTs operating beyond 100 GHz for 6G communication
Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
Wide-bandgap materials (SiC/GaN) for higher power density
Miniaturization through chip-scale packaging
Improved thermal management solutions for automotive applications