Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJD127T4

MJD127T4

STMicroelectronics

TRANS PNP DARL 100V 8A DPAK

5187

MJB44H11T4-A

MJB44H11T4-A

STMicroelectronics

TRANS NPN 80V 10A D2PAK-3

2116

BD135-16

BD135-16

STMicroelectronics

TRANS NPN 45V 1.5A SOT-32

5603

MJD117T4

MJD117T4

STMicroelectronics

TRANS PNP DARL 100V 2A D-PAK

591

MJE2955T

MJE2955T

STMicroelectronics

TRANS PNP 60V 10A TO-220

4433

BD682

BD682

STMicroelectronics

TRANS PNP DARL 100V 4A SOT-32

3122

MJE3055T

MJE3055T

STMicroelectronics

TRANS NPN 60V 10A TO-220

2750

BD139-16

BD139-16

STMicroelectronics

TRANS NPN 80V 1.5A SOT32

6746

BCP56-16

BCP56-16

STMicroelectronics

TRANS NPN 80V 1A SOT-223

58039

BD139-10

BD139-10

STMicroelectronics

TRANS NPN 80V 1.5A SOT-32

3328

TIP31A

TIP31A

STMicroelectronics

TRANS NPN 60V 3A TO-220

3003

MJE340

MJE340

STMicroelectronics

TRANS NPN 300V 0.5A SOT-32

2485

MJD45H11T4

MJD45H11T4

STMicroelectronics

TRANS PNP 80V 8A D-PAK

658

STN9360

STN9360

STMicroelectronics

TRANS PNP 600V 0.5A SOT-223

3674

BCP53-16

BCP53-16

STMicroelectronics

TRANS PNP 80V 1A SOT-223

4140

BU508AW

BU508AW

STMicroelectronics

TRANS NPN 700V 8A TO-247

1377

2STF2550

2STF2550

STMicroelectronics

TRANS PNP 50V 5A SOT 89

6682

ST13003-K

ST13003-K

STMicroelectronics

TRANS NPN 400V 1.5A SOT-32

2341

STF817A

STF817A

STMicroelectronics

TRANS PNP 80V 1.5A SOT89

0

BD680

BD680

STMicroelectronics

TRANS PNP DARL 80V 4A SOT-32

3505

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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