Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCX68-16

BCX68-16

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

3000

JANTXV2N3868S

JANTXV2N3868S

Roving Networks / Microchip Technology

TRANS PNP 60V 0.003A TO39

0

NTE2302

NTE2302

NTE Electronics, Inc.

TRANS NPN 800V 5A TO3P

712

2SCR554P5T100

2SCR554P5T100

ROHM Semiconductor

NPN 80V 1.5A MEDIUM POWER TRANSI

10172

APT13003NZTR-G1

APT13003NZTR-G1

Zetex Semiconductors (Diodes Inc.)

IC POWER TRANSISTOR HV TO92

6886

DTC143Z

DTC143Z

TRANS DIGITAL BJT NPN 50V 100MA

55800

2N5551ZL1

2N5551ZL1

TRANS NPN 160V 600MA TO92-3

36000

CMPT4401 TR PBFREE

CMPT4401 TR PBFREE

Central Semiconductor

TRANS NPN 40V 0.6A SOT-23

655

2SD2670TL

2SD2670TL

ROHM Semiconductor

TRANS NPN 12V 3A TSMT3

5291

MJ11021G

MJ11021G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 250V 15A TO204

1067200

NSVBCW68GLT1G

NSVBCW68GLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 800MA SOT23-3

2147483647

BC847CLT1G

BC847CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

0

BC817K40E6433HTMA1

BC817K40E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 45V 500MA SOT23-3

16157

FZTA92TA

FZTA92TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A SOT-223

112000

BC558ABU

BC558ABU

TRANS PNP 30V 100MA TO92-3

30000

ZXTNS618MCTA

ZXTNS618MCTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 4.5A DFN

5934

2SA2125-S-TD-E

2SA2125-S-TD-E

TRANS PNP 50V 3A PCP

20000

MMBT4401WT1G

MMBT4401WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SC70-3

1016

DSS5540X-13

DSS5540X-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 4A SOT-89

5415

MPSW56RLRPG

MPSW56RLRPG

SMALL SIGNAL BIPOLAR TRANSISTOR

170126

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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