Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - Single

Part Number	Description / PDF	Quantity
BC857CB5000 IR (Infineon Technologies)	BIPOLAR TRANSISTOR TRANSISTOR	540000
DSC5A01R0L Panasonic	TRANS NPN 40V 0.05A SMINI3	2990
FJC690TF	TRANS NPN 45V 2A SOT89-3	3580
2N6033	HIGH POWER NPN TRANSISTOR	0
MCH3315-TL-E	TRANSISTOR	12000
CMPTA42 TR Central Semiconductor	TRANS NPN 300V 0.5A SOT-23	19
2DA1201Y-7 Zetex Semiconductors (Diodes Inc.)	TRANS PNP 120V 0.8A SOT89	7722000
2SD1898T100Q ROHM Semiconductor	TRANS NPN 80V 1A SOT-89	28
STD878T4 STMicroelectronics	TRANS NPN 30V 5A DPAK	0
2SC5832-TL-E	DRIVER APPLICATIONS	84000
STBV45-AP STMicroelectronics	TRANS NPN 400V 0.75A TO-92	0
KSH44H11ITU	NPN UPITAXIAL SILICON TRANSISTOR	40320
FZT489TA Zetex Semiconductors (Diodes Inc.)	TRANS NPN 30V 1A SOT223	14872000
PBSS8110Z,135 Nexperia	TRANS NPN 100V 1A SOT223	4753
BUL7216 STMicroelectronics	TRANS NPN 700V 3A TO-220	0
2N6751	POWER BIPOLAR TRANSISTOR NPN	226
MPS2222RLRAG	TRANS NPN 30V 600MA TO92-3	30000
2SC3935GQL Panasonic	TRANS NPN 10V 0.05A SMINI-3P	5027
CMPTA44 TR PBFREE Central Semiconductor	TRANS NPN 400V 0.3A SOT-23	2434
MMBT2907	0.8A, 40V, PNP	150972

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

Type	Functional Characteristics	Application Examples
NPN Transistor	Majority carriers: electrons. Requires positive base current for conduction.	Low-noise amplifiers, digital logic circuits
PNP Transistor	Majority carriers: holes. Conducts with negative base current.	Power supply circuits, motor controllers
High-Frequency BJT	Optimized for RF/microwave signal amplification (f_T > 100 MHz)	Wireless communication systems, radar
Power BJT	High current/voltage ratings (I_C > 1A, V_CE > 50V)	Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

Emitter: Heavily doped region emitting charge carriers
Base: Thin, lightly doped middle region controlling carrier flow
Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

Parameter	Description	Importance
Current Gain (h_FE)	Ratio of collector to base current (10-1000)	Determines amplification capability
Transition Frequency (f_T)	Frequency at which current gain drops to 1	Limits high-frequency performance
Max Collector Current (I_Cmax)	Maximum allowable continuous collector current	Defines power handling capability
Breakdown Voltage (V_CEO)	Max voltage between collector and emitter	Prevents device failure under stress
Saturation Voltage (V_CEsat)	Voltage drop in fully conducting state	Affects power efficiency in switching

5. Application Areas

Consumer Electronics: Audio amplifiers, LED drivers
Automotive: Engine control units, electric vehicle inverters
Industrial: PLCs, motor controllers
Telecommunications: RF power amplifiers, fiber optic transceivers
Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

Manufacturer	Product Series	Key Specifications	Typical Use
ON Semiconductor	2N3904	hFE: 100-300, fT: 300 MHz	General-purpose switching
Infineon	BC547	VCEO: 50V, ICmax: 100mA	Analog signal amplification
STMicroelectronics	2SD2656	ICmax: 15A, VCEO: 80V	Power inverter applications
Diodes Inc.	BFR93A	fT: 10 GHz, Noise Figure: 2dB	High-frequency front-end amplifiers

7. Selection Guidelines

Determine operating frequency: Select fT > 3 target frequency
Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
Thermal considerations: Calculate power dissipation (P=V_CE I_C)
Package type: TO-92 for low power, TO-220 for high-power applications
Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

High-frequency BJTs operating beyond 100 GHz for 6G communication
Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
Wide-bandgap materials (SiC/GaN) for higher power density
Miniaturization through chip-scale packaging
Improved thermal management solutions for automotive applications