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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
NTE319

NTE319

NTE Electronics, Inc.

RF TRANS NPN 20V TO72

40
NTE77

NTE77

NTE Electronics, Inc.

RF TRANS NPN 30V 1.8GHZ TO39

72
NTE2402

NTE2402

NTE Electronics, Inc.

RF TRANS NPN 15V 5GHZ SOT23

1122
NTE311

NTE311

NTE Electronics, Inc.

RF TRANS NPN 30V 800MHZ TO39

64
NTE2403

NTE2403

NTE Electronics, Inc.

RF TRANS PNP 15V 5GHZ SOT23

508
NTE236

NTE236

NTE Electronics, Inc.

RF TRANS NPN 25V TO220

226
NTE235

NTE235

NTE Electronics, Inc.

RF TRANS NPN 75V 150MHZ TO220

4791
NTE313

NTE313

NTE Electronics, Inc.

RF TRANS NPN 30V 530MHZ 3SMD

20
NTE55MCP

NTE55MCP

NTE Electronics, Inc.

RF TRANS PNP 30MHZ TO220 PAIR

0
NTE224

NTE224

NTE Electronics, Inc.

RF TRANS NPN 60V 300MHZ TO39

18616
NTE486

NTE486

NTE Electronics, Inc.

RF TRANS NPN 20V 2GHZ TO39

0
NTE2634

NTE2634

NTE Electronics, Inc.

T-PNP SI VIDEO DR 1GHZ TO-126

2688
NTE299

NTE299

NTE Electronics, Inc.

RF TRANS NPN 35V TO202

197
NTE2687

NTE2687

NTE Electronics, Inc.

RF TRANS NPN 450V 20MHZ TO220

762
NTE319P

NTE319P

NTE Electronics, Inc.

RF TRANS NPN 20V 500MHZ TO92

36
NTE295

NTE295

NTE Electronics, Inc.

RF TRANS NPN 75V 250MHZ TO126

932
NTE229

NTE229

NTE Electronics, Inc.

RF TRANS NPN 30V 500MHZ TO92

233
NTE2633

NTE2633

NTE Electronics, Inc.

T-NPN SI VIDEO DR 1GHZ TO-126

796
MMBT918

MMBT918

NTE Electronics, Inc.

RF 0.05A, VERY HIGH FREQUENCY BA

14030
NTE15

NTE15

NTE Electronics, Inc.

RF TRANS NPN 19V 1.1GHZ 3SIP

94

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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