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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFP182RE7764HTSA1

BFP182RE7764HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT143R-4

0
BFP540H6327XTSA1

BFP540H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 5V 30GHZ SOT343-4

27661
BFR193E6327HTSA1

BFR193E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT23-3

2689
BFP640FESDH6327XTSA1

BFP640FESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 46GHZ 4TSFP

2945
BFP760H6327XTSA1

BFP760H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4V 45GHZ SOT343

2995
BFP193WH6327XTSA1

BFP193WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT343-4

234
BFP843H6327

BFP843H6327

IR (Infineon Technologies)

ULTRA LOW-NOISE TRANSISTOR

194705
BFP410H6327XTSA1

BFP410H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 5V 25GHZ SOT343

2975
BFS 17P E6433

BFS 17P E6433

IR (Infineon Technologies)

RF TRANS NPN 15V 1.4GHZ SOT23-3

0
BFR840L3RHESDE6327XTSA1

BFR840L3RHESDE6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 2.6V 75GHZ TSLP-3

6846
BFR360FH6765XTSA1

BFR360FH6765XTSA1

IR (Infineon Technologies)

RF TRANS NPN 9V 14GHZ TSFP-3

5990
BFP640E6327

BFP640E6327

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

26583
BF771E6327HTSA1

BF771E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT23-3

14203
BFP720FH6327XTSA1

BFP720FH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 45GHZ 4TSFP

655
BFR181E6327

BFR181E6327

IR (Infineon Technologies)

LOW-NOISE TRANSISTOR

54000
BFP183

BFP183

IR (Infineon Technologies)

BFP183 - LOW-NOISE SI TRANSISTOR

2000
BFR106E6327HTSA1

BFR106E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 15V 5GHZ SOT23-3

70475
BF771E6765N

BF771E6765N

IR (Infineon Technologies)

RF TRANSISTOR, NPN

111000
BFR181WE6327

BFR181WE6327

IR (Infineon Technologies)

LOW-NOISE TRANSISTOR

31570
BFP183WE6327

BFP183WE6327

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

4546

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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