ample-chip ample-chip
RFQ
BOM

Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MMBTH10Q-7-F

MMBTH10Q-7-F

Zetex Semiconductors (Diodes Inc.)

RF TRANSISTOR SOT23

2935
BFS17NTA

BFS17NTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 11V 3.2GHZ SOT23-3

28551
MMBTH24-7-F

MMBTH24-7-F

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 40V 400MHZ SOT23-3

300818000
MMBTH10-7-F

MMBTH10-7-F

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 25V 650MHZ SOT23-3

2900
ZUMTS17NTA

ZUMTS17NTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 11V 3.2GHZ SOT323

346481000
BFS17NQTA

BFS17NQTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 11V 3.2GHZ SOT23

0
BFS17TA

BFS17TA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ SOT23-3

0
BFS17HTA

BFS17HTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ SOT23-3

0
BFQ31ATC

BFQ31ATC

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 600MHZ SOT23-3

0
ZTX325STOB

ZTX325STOB

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ E-LINE

0
ZUMTS17HTA

ZUMTS17HTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ SOT323

0
FMMT5179TA

FMMT5179TA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 12V 2GHZ SOT23-3

0
FMMTH10TC

FMMTH10TC

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 25V 650MHZ SOT23-3

0
ZTX325

ZTX325

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ E-LINE

0
BFS17HTC

BFS17HTC

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ SOT23-3

0
ZTX325STOA

ZTX325STOA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ E-LINE

0
FMMT918TA

FMMT918TA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 600MHZ SOT23-3

0
BFQ31ATA

BFQ31ATA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 600MHZ SOT23-3

0
FMMTH10TA

FMMTH10TA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 25V 650MHZ SOT23-3

0
ZTX325STZ

ZTX325STZ

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ E-LINE

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
RFQ BOM Call Skype Email
Top