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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFR360FH6765XTSA1

BFR360FH6765XTSA1

IR (Infineon Technologies)

RF TRANS NPN 9V 14GHZ TSFP-3

5990
MRF1000MB

MRF1000MB

Metelics (MACOM Technology Solutions)

RF TRANS NPN 20V 332A-03

0
BFP196E6327

BFP196E6327

BFP196 - HIGH LINEARITY SI- AND

91168
2SC5454-T1-A

2SC5454-T1-A

Renesas Electronics America

RF SMALL SIGNAL BIPOLAR TRANS

219000
4MP10CH-TL-E

4MP10CH-TL-E

BIP NPN 0.1A 200V

0
CPH6001A-TL-E

CPH6001A-TL-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 6.7GHZ 6CPH

168000
MAX2601ESA+

MAX2601ESA+

Maxim Integrated

RF TRANS NPN 15V 1GHZ 8SOIC

18515800
2SC5087R(TE85L,F)

2SC5087R(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 12V 8GHZ SMQ

5418
NTE161

NTE161

NTE Electronics, Inc.

RF TRANS NPN 45V 600MHZ TO72

162
BFP640E6327

BFP640E6327

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

26583
MAPRST0912-50

MAPRST0912-50

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MMBTH10LT1

MMBTH10LT1

TRANS SS VHF NPN 25V SOT23

213500
NTE395

NTE395

NTE Electronics, Inc.

RF TRANS PNP 25V 2.3GHZ TO72

10
BF771E6327HTSA1

BF771E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT23-3

14203
BFP720FH6327XTSA1

BFP720FH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 45GHZ 4TSFP

655
BFQ18A,115

BFQ18A,115

NXP Semiconductors

TRANS NPN 18V 150MA SOT89

4962
BFU530XRR

BFU530XRR

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT143R

1249
2SC4536-AZ

2SC4536-AZ

Renesas Electronics America

RF TRANSISTOR FOR HIGH FREQUENCY

0
MRF448

MRF448

Metelics (MACOM Technology Solutions)

RF TRANS NPN 50V 211-11

0
15GN01CA-TB-E

15GN01CA-TB-E

RF SMALL SIGNAL TRANSISTOR

135000

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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