Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMB16,115

PUMB16,115

NXP Semiconductors

NOW NEXPERIA PUMB16 - SMALL SIGN

127500

PBLS1503V,115

PBLS1503V,115

NXP Semiconductors

0.1A 50V 2-ELEMENT NPN AND PNP

0

PEMB4,115

PEMB4,115

NXP Semiconductors

NOW NEXPERIA PEMB4 - SMALL SIGNA

56821

PUMB14,115

PUMB14,115

NXP Semiconductors

NOW NEXPERIA PUMB14 - SMALL SIGN

75000

PBLS2003S,115

PBLS2003S,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

4620

PBLS4003V,115

PBLS4003V,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

36000

PBLS1504V,115

PBLS1504V,115

NXP Semiconductors

0.1A 50V 2-ELEMENT NPN AND PNP

15539

PUMF12,115

PUMF12,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PBLS2002S,115

PBLS2002S,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

3258

PBLS4005V,115

PBLS4005V,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

20460

PBLS2001S,115

PBLS2001S,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

3990

PUMB20,115

PUMB20,115

NXP Semiconductors

NOW NEXPERIA PUMB20 - SMALL SIGN

50800

PEMH17,115

PEMH17,115

NXP Semiconductors

NOW NEXPERIA PEMH17 - SMALL SIGN

24000

PBLS4001V,115

PBLS4001V,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

11920

PEMB1,115

PEMB1,115

NXP Semiconductors

NOW NEXPERIA PEMB1 - SMALL SIGNA

62840

PEMB15,115

PEMB15,115

NXP Semiconductors

NOW NEXPERIA PEMB15 - SMALL SIGN

62428

PBLS1503V,115-NXP

PBLS1503V,115-NXP

NXP Semiconductors

0.1A 50V 2-ELEMENT NPN AND PNP

12000

PBLS4004V,115

PBLS4004V,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

3990

PBLS4002V,115

PBLS4002V,115

NXP Semiconductors

TRANS NPN PREBIAS/PNP SOT666

0

PBLS1502V,115

PBLS1502V,115

NXP Semiconductors

TRANS NPN PREBIAS/PNP SOT666

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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