Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DCX114EU-13R-F

DCX114EU-13R-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS SOT363

0

ACX114EUQ-7R

ACX114EUQ-7R

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363 T&R 3K

0

DDC142TU-7-F

DDC142TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

0

DDA144EH-7

DDA144EH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

DDA114TU-7-F

DDA114TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2PNP PREBIAS 0.2W SOT363

4881

UMC4N-7

UMC4N-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS SOT353

367463000

UMC5NQ-7

UMC5NQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIASTRANSISTORSOT353

2147483647

DDA122LH-7

DDA122LH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

ADC114EUQ-7

ADC114EUQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363 T&R 3K

33000

DDA124EK-7-F

DDA124EK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT26

0

DCX144EU-7-F

DCX144EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT363

0

DDA114YH-7

DDA114YH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

DDA114TK-7-F

DDA114TK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT26

0

DCX122TU-7-F

DCX122TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT363

0

DDA124EH-7

DDA124EH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT563

0

DDC114TU-7-F

DDC114TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

1415

DDC143TH-7

DDC143TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.15W SOT563

0

DDC115EU-7-F

DDC115EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

33000

ADA114YUQ-7

ADA114YUQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363

66000

DCX144EK-7-F

DCX144EK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS 0.3W SC74R

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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