Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
RN2602(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.3W SM6	2730
RN2701,LF Toshiba Electronic Devices and Storage Corporation	PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K	8981
RN2710,LF Toshiba Electronic Devices and Storage Corporation	PNPX2 BRT Q1BSR47KOHM Q1BER22KOH	3000
RN4990FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.1W ES6	0
RN4608(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.3W SM6	2689
RN4906,LF Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.2W US6	0
RN1973(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.2W US6	3000
RN4989(T5L,F,T) Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.2W US6	2760
RN4908,LF(CT Toshiba Electronic Devices and Storage Corporation	PNP + NPN BRT Q1BSR10KOHM Q1BER4	6000
RN2963(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.2W US6	2892
RN2909,LF(CT Toshiba Electronic Devices and Storage Corporation	PNPX2 BRT Q1BSR47KOHM Q1BER22KOH	6000
RN2511(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.3W SMV	2980
RN4989(TE85L,F) Toshiba Electronic Devices and Storage Corporation	NPN + PNP BRT, Q1BSR=47KΩ, Q1BER	3000
RN1905FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.1W ES6	1612
RN1902T5LFT Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.2W US6	2805
RN4902FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.1W ES6	5928
RN2706,LF Toshiba Electronic Devices and Storage Corporation	PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO	9000
RN4988FE,LF(CT Toshiba Electronic Devices and Storage Corporation	NPN + PNP BRT Q1BSR22KOHM Q1BER4	8000
RN1502(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.3W SMV	2570
RN4910,LF Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.2W US6	0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications