Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
RN46A1(TE85L,F) Toshiba Electronic Devices and Storage Corporation	PNP + NPN BRT, Q1BSR=22KΩ, Q1BER	3000
RN1909,LF(CT Toshiba Electronic Devices and Storage Corporation	NPNX2 BRT Q1BSR47KOHM Q1BER22KOH	5972
RN2703JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ESV	3
RN2709JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ESV	4000
RN2713JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ESV	4000
RN2906FE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ES6	4000
RN2901,LF(CT Toshiba Electronic Devices and Storage Corporation	PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K	5779
RN1706,LF Toshiba Electronic Devices and Storage Corporation	NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO	3000
RN1509(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.3W SMV	2970
RN1702JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.1W ESV	7302
RN4905FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.1W ES6	6326
RN2707JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ESV	2845
RN2705JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ESV	695
RN1905(T5L,F,T) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.2W US6	781
RN2964(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W US6	2855
RN1711,LF Toshiba Electronic Devices and Storage Corporation	NPNX2 BRT Q1BSR10KOHM Q1BERINF.K	6000
RN1703JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.1W ESV	4010
RN2706JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ESV	0
RN4907FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.1W ES6	861
RN1708,LF Toshiba Electronic Devices and Storage Corporation	NPNX2 BRT Q1BSR22KOHM Q1BER47KOH	5963

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications