Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
CQ202-4DS

CQ202-4DS

Central Semiconductor

TRIAC 4A TH TO-202-2

0

CQ218-45D

CQ218-45D

Central Semiconductor

TRIAC 45A 400V TO-218

0

CQ218-45B

CQ218-45B

Central Semiconductor

TRIAC 45A 200V TO-218

0

CQ48-25M

CQ48-25M

Central Semiconductor

TRIAC 25A 600V TO-48

0

CQD-4M TR13

CQD-4M TR13

Central Semiconductor

SMT TRIAC

0

CQ220-25MFP

CQ220-25MFP

Central Semiconductor

TRIAC 25A TO-220

0

CQ3P-40D

CQ3P-40D

Central Semiconductor

TRIAC 40A 400V TO-3

0

CQ220L-8DS

CQ220L-8DS

Central Semiconductor

TRIAC A TO-220

0

CQ220-16MFP

CQ220-16MFP

Central Semiconductor

TRIAC 16A TO-220

0

CQ218I-25M

CQ218I-25M

Central Semiconductor

TRIAC 25A 600V TO-218

0

CQ218I-40M

CQ218I-40M

Central Semiconductor

TRIAC 40A 600V TO-218

0

CS3P-40D

CS3P-40D

Central Semiconductor

TRIAC 40A 400V TO-3

0

CQ218-45N

CQ218-45N

Central Semiconductor

TRIAC 45A 800V TO-218

0

CQ220I-6D

CQ220I-6D

Central Semiconductor

TRIAC A TO-220

0

CQ220-8MFP

CQ220-8MFP

Central Semiconductor

TRIAC 8A TO-220

0

CQ218-45M

CQ218-45M

Central Semiconductor

TRIAC 45A 600V TO-218

0

CQ3P-25D

CQ3P-25D

Central Semiconductor

TRIAC 25A 400V TO-3

0

CQ220-8DS

CQ220-8DS

Central Semiconductor

TRIAC 8A TO-220

0

CQ3P-40N

CQ3P-40N

Central Semiconductor

TRIAC 40A 800V TO-3

0

CQ3P-40M

CQ3P-40M

Central Semiconductor

TRIAC 40A 600V TO-3

0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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