Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
ACTT12X-800CQ

ACTT12X-800CQ

WeEn Semiconductors Co., Ltd

ACTT12X-800C/TO-220F/STANDARD

0

BTA412Y-800ETQ

BTA412Y-800ETQ

WeEn Semiconductors Co., Ltd

BTA412Y-800ET SIL3P STANDARD

0

ACT108-600EQP

ACT108-600EQP

WeEn Semiconductors Co., Ltd

ACT108-600E/TO-92/STANDARD MAR

0

ACTT16X-800CTNQ

ACTT16X-800CTNQ

WeEn Semiconductors Co., Ltd

ACTT16X-800CTN/TO-220F/STANDAR

0

BT137S-800F,118

BT137S-800F,118

WeEn Semiconductors Co., Ltd

TRIAC 800V 8A DPAK

0

BT234-800E,127

BT234-800E,127

WeEn Semiconductors Co., Ltd

TRIAC 4QUAD 35A 800V TO-220AB

0

OT412,115

OT412,115

WeEn Semiconductors Co., Ltd

TRIAC SC73

0

BT136X-800,127

BT136X-800,127

WeEn Semiconductors Co., Ltd

TRIAC 800V 4A TO220-3

0

BTA201-800E,116

BTA201-800E,116

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 800V 1A TO92-3

0

BT137-600E/DG

BT137-600E/DG

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 600V 8A TO220AB

0

ACTT10-800EQ

ACTT10-800EQ

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 800V 10A TO220AB

0

BT137B-800,118

BT137B-800,118

WeEn Semiconductors Co., Ltd

TRIAC 800V 8A D2PAK

0

BT137S-800E,118

BT137S-800E,118

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 800V 8A DPAK

0

BT234X-600D,127

BT234X-600D,127

WeEn Semiconductors Co., Ltd

TRIAC 4QUAD 35A 600V TO-220F

0

BTA308-800ETQ

BTA308-800ETQ

WeEn Semiconductors Co., Ltd

BTA308-800ETQ/SIL3P/STANDARD MAR

0

BT234X-600E,127

BT234X-600E,127

WeEn Semiconductors Co., Ltd

TRIAC 4QUAD 35A 600V TO-220F

0

BT137S-600D,118

BT137S-600D,118

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 600V 8A DPAK

0

OT411,127

OT411,127

WeEn Semiconductors Co., Ltd

TRIAC TO220-3

0

BT234X-800E,127

BT234X-800E,127

WeEn Semiconductors Co., Ltd

TRIAC 4QUAD 35A 800V TO-220F

0

ACTT4S-800C,118

ACTT4S-800C,118

WeEn Semiconductors Co., Ltd

TRIAC 800V 4A DPAK

0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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