Thyristors - TRIACs

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600V 40A TO-3P 3-QUAD TRIAC

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SST137K-600E

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600V 8A DPAK 4-QUAD TRIAC

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800V 40A TO-3P 3-QUAD TRIAC

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SST12A-800CW

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800V 12A PACKAGE TO-220A 3-QUADR

0

SST136K-600D

SST136K-600D

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600V 4A DPAK 4-QUAD TRIAC

0

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SST12B-800BW

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800V 12A PACKAGE TO-220B 3-QUADR

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SMC Diode Solutions

800V 8A PACKAGE TO-220A 3-QUADRA

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SST138C-600E

SMC Diode Solutions

600V 12A PACKAGE TO-220C 4-QUADR

0

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SST16B-800BW

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800V 16A TO-220B 3-QUADRANTS TRI

1000

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0

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600V 20A PACKAGE TO-220B 3-QUADR

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SST24B-800CW

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800V 25A PACKAGE TO-220B 3-QUADR

0

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SST26Z-800CW

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800V 25A PACKAGE TO-3P 3-QUADRAN

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SST41Z-600B

SST41Z-600B

SMC Diode Solutions

600V 40A TO-3P 3-QUAD TRIAC

0

SST24A-800BW

SST24A-800BW

SMC Diode Solutions

800V 25A PACKAGE TO-220A 3-QUADR

0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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