Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
QJ8016RH3TP

QJ8016RH3TP

Wickmann / Littelfuse

TRIAC 800V 16A TO-220R

0

T2050H-6G-TR

T2050H-6G-TR

STMicroelectronics

TRIAC ALTERNISTOR 600V 20A D2PAK

0

L6X8E5AP

L6X8E5AP

Wickmann / Littelfuse

TRIAC SENS GATE 600V 0.8A TO92

0

BTA06-600CWRG

BTA06-600CWRG

STMicroelectronics

TRIAC ALTERNISTOR 600V TO220AB

3852

MAC16CMG

MAC16CMG

TRIAC, 600V, 16A, TO-220AB

16602

T1235-600G

T1235-600G

STMicroelectronics

TRIAC ALTERNISTOR 600V 12A D2PAK

998

BTA204-600C,127

BTA204-600C,127

NXP Semiconductors

NOW WEEN - BTA204-600C - 3 QUADR

5050

Z0107NA,126

Z0107NA,126

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 800V 1A TO92-3

0

NTE56022

NTE56022

NTE Electronics, Inc.

TRIAC 200V 40A TO 48 ISOL STUD

4

NTE56026

NTE56026

NTE Electronics, Inc.

TRIAC 600V 40A TO 48 ISOL STUD

28

TMA124S-L

TMA124S-L

Sanken Electric Co., Ltd.

TRIAC 400V 12A

4209

BTA16-800BW3G

BTA16-800BW3G

Wickmann / Littelfuse

TRIAC 800V 16A TO220AB

218

MAC97A8RLRMG

MAC97A8RLRMG

4 QUADRANT LOGIC LEVEL TRIAC

6921

MAC97A8RLRPG

MAC97A8RLRPG

4 QUADRANT LOGIC LEVEL TRIAC

159955

BTB08-800CW3G

BTB08-800CW3G

4 QUADRANT LOGIC LEVEL TRIAC, 80

4000

BTA10-600CWRG

BTA10-600CWRG

STMicroelectronics

TRIAC ALTERNISTOR 600V TO220AB

0

Q8004D4RP

Q8004D4RP

Wickmann / Littelfuse

TRIAC 800V 4A TO252

0

BT234-600D,127

BT234-600D,127

NXP Semiconductors

NOW WEEN - BT234-600D - 4 QUADRA

2000

Q8012NH2RP

Q8012NH2RP

Wickmann / Littelfuse

TRIAC ALTERNISTOR 800V 12A TO2

0

2N6348A

2N6348A

TRIAC 600V 12A TO220AB

1875

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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