Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
BTA202X-800E/L01,1

BTA202X-800E/L01,1

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 800V 2A TO220F

0

BT139B-600E,118

BT139B-600E,118

WeEn Semiconductors Co., Ltd

NOW WEEN - BT139B-600E - 4 QUADR

235

T1220T-6I

T1220T-6I

STMicroelectronics

TRIAC ALTERNISTOR 600V TO220AB

351

BTA12-800BWRG

BTA12-800BWRG

STMicroelectronics

TRIAC ALTERNISTOR 800V TO220AB

140

MAC997A8RLRPG

MAC997A8RLRPG

4 QUADRANT LOGIC LEVEL TRIAC

2000

L4004V8TP

L4004V8TP

Wickmann / Littelfuse

TRIAC SENS GATE 400V 4A TO251

0

BTA08-800CW3LFG

BTA08-800CW3LFG

SNUBBERLESS TRIAC

12119

2N6071A

2N6071A

4 QUADRANT LOGIC LEVEL TRIAC

218720

ACST1210-7G

ACST1210-7G

STMicroelectronics

TRIAC SENS GATE 700V 12A D2PAK

0

ACST1035-7T

ACST1035-7T

STMicroelectronics

TRIAC 700V 10A TO220AB

1530

BT134W-800,115

BT134W-800,115

WeEn Semiconductors Co., Ltd

TRIAC 800V 1A SC73

0

T1050-8G-TR

T1050-8G-TR

STMicroelectronics

TRIAC ALTERNISTOR 800V 10A D2PAK

717

T850H-6I

T850H-6I

STMicroelectronics

TRIAC ALTERNISTOR 600V TO220AB

0

FKPF3N80TU

FKPF3N80TU

TRIAC, 800V, 3A, TO-220AB

1950

T1625T-8I

T1625T-8I

STMicroelectronics

TRIAC 800V 16A TO220AB

0

BT139-600G0TQ

BT139-600G0TQ

WeEn Semiconductors Co., Ltd

BT139-600G0T/SIL3P/STANDARD MA

0

BTA06T-600CWRG

BTA06T-600CWRG

STMicroelectronics

TRIAC ALTERNISTOR 600V 6A TO-220

0

T835-600G

T835-600G

STMicroelectronics

TRIAC ALTERNISTOR 600V 8A D2PAK

1158

L4006D6TP

L4006D6TP

Wickmann / Littelfuse

TRIAC SENS GATE 400V 6A TO252

0

NTE56045

NTE56045

NTE Electronics, Inc.

TRIAC-500VRM 16A FULL-PAK

236

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

RFQ BOM Call Skype Email
Top